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New Jersey Semiconductor
New Jersey Semiconductor

VN1310 Datasheet Preview

VN1310 Datasheet

N-Channel Enhancement-Mode Vertical DMOS FETs

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VN1310 pdf
<$emi-Conductoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
N-Channel Enhancement-Mode
Vertical DMOS FETs
VN1304
VN1306
VN1310
Ordering Information
BVDSS/
BVDGS
n
•^DSfON)
(max)
'o(ON)
(min)
40V 8.00 0.5A
60V 8.00
0.5A
100V
8.00
0.5A
Order Number / Package
TO-39
TO-92
VN1306N2
VN1310N3
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C|SS and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
BV,DSS
BV,DOS
±20V
-55°Cto+150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
•"> - .«.
^ •• • ^••••ti* X >%*vfea-.^^ ««»« .•!•
Package Options
TO-39
Case: DRAIN
SOD
TO-92
Note: See Package Outline section for dimensions.



New Jersey Semiconductor
New Jersey Semiconductor

VN1310 Datasheet Preview

VN1310 Datasheet

N-Channel Enhancement-Mode Vertical DMOS FETs

No Preview Available !

VN1310 pdf
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
TO-39
0.4A
TO-92
0.25A
' ID (continuous) is limited by max rated Tj
1.4A
1.3A
Power Dissipation
@ Tc = 25°C
3.0W
LOW
°c^/w
41
125
VN1304/VN1306/VN1310
3a
°c/w
125
170
'DR*
0.4A
0.25A
'DRM
1.4A
1.3A
Electrical Characteristics (@ 25 C unless otherwise specified)
Symbol
Parameter
Min Typ Max
Unit
BVDSS
Drain-to-Source
Breakdown Voltage
VN1310
VN1306
100
60
V
VN1304
40
VoS(th)
AVGS(th)
Gate Threshold Voltage
Change in VGS(th) with Temperature
0.8 2.4 V
-3.9 -5.0 mV/°C
IGSS Gate Body Leakage
IDSS Zero Gate Voltage Drain Current
100 nA
1 MA
100 uA
'D(ON)
ON-State Drain Current
0.25
0.50
0.6
1.4
RDS<ON)
Static Drain-to-Source
ON-State Resistance
5.0 15
5.0 8.0
ARoS(ON)
Change in RDSJON) with Temperature
0.8 2
GFS Forward Transconductance
120
GISS Input Capacitance
27 35
CQSS
Common Source Output Capactance
13 15
CRSS
Reverse Transfer Capacitance
35
td(ON)
Turn-ON Delay Time
25
tr Rise Time
25
td(OFF)
Turn-OFF Delay Time
26
tf Fall Time
25
VSD Diode Forward Voltage Drop
1.0 1.3
trr Reverse Recovery Time
350
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300us pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
fj
%/°c
mU
pF
ns
V
ns
Conditions
VGS = 0V, ID= 1 mA
VGS = VDS, ID = 1mA
VGs = VDS, ID = 1mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA=125°C
VGS = 5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 5V, ID = 50mA
VGS = 10V, ID= 500mA
VGS = 10V,ID = 500mA
VDS = 25V, ID = 500mA
VGS = 0V, VDS = 25V
f - 1 MHz
VDD = 25V
I - ^nnmA
RGEN = 25H
VGS = 0V. ISD = 0.5A
VGS = 0V. ISD = 0.5A
Switching Waveforms and Test Circuit
10V
INPUT
0V
/
/
10%,
<C90%
\)
'(ON)
'd(ON)
'r
*d(OFF) 'F
OUTPUT
0V
1I
10%-*
90% ^
Ho%
-90" 4
PULSE
GENERATOR
R
gen
i AAAy
((Jnl)\
T INPUT
_L
,
<;
^
/
/| 1
I I-
x-
•=
OUTPUT
D.U.T.


Part Number VN1310
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Maker New Jersey Semiconductor
Total Page 2 Pages
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