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New Jersey Semiconductor
New Jersey Semiconductor

VP0106ND Datasheet Preview

VP0106ND Datasheet

P-Channel Enhancement-Mode Vertical DMOS Power FET

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VP0106ND pdf
4/
Product Summary
, fine.
P-Channel Enhancement-Mode
Vertical DMOS Power FET's
BVDSS/ RDS(ON ID(ON)
BVDGS (max) (mini
TO-39
TO-52
Order Number /Package
TO-92
TO-220 Quad P-DIP Quad C-DIP
Dice
-40V
-60V
-90V
811 -Q.5A VP0104N2 VP0104N9 VP0104N3 VP0104N5 VP0104N6 VP0104N7 VP0104ND
an -0.5A VP0106N2 VP0106N9 VP0106N3 VP0106N5 VP0106N6 VP0106N7 VP0106ND
an -0.5A VP0109N2 VP0109N9 VP0109IM3 VP010PN5
-
- VP0109ND
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
VP0109
VP0106
VP01 04
Min Typ Max Unit
Conditions
-90
-60
-40
V ID - -imA, VGS = O
VGS(th)
AVGS(th)
IGSS
IDSS
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
-1.5
-5.8
1
-3.5
-6.5
100
-10
m1
ID(OIM)
RDS(ON)
ARDS(ON)
GFS
Ciss
Coss
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
ON-State Drain Current
-0.15
Static Drain-to-Source
-0.50
ON-State Resistance
Change in RDS(ON) with Temperature
Forward Transconductance
160
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-OlM Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
-0.25
-1.0
11
5
0.55
200
45
22
3
4
7
3
4
-1.2
400
15
8
1.0
60
30
B
6
10
5
6
-2.0
V
mV/°C
nA
MA
mA
A
a
%/°c
mU
VGS = VDS.ID = -imA
ID = -imA, VGS = VDS
VGS = ±20V, V D S ^ O
VGS * 0, VDS » Max Rating
VGS = 0, VDS = 0.8 Max Rating
TA = 125°C
VGS = -5V, VDS =-25V
VGS = -iov, VDS = -25v
VGS = -sv, ID = -o.i A
VGS • 10V, ID = -0,5A
ID = -0.5A, VGS = -10V
VDS - -25V, ID = -0.5A
pF VGS = O, VDS- -25v,
f = 1MHz,
ns VDD = -25V, I D = 1A,
RS - 50ft
V ISD = -2.5A, VGS = o '
ns ISD = -IA, VGS =O
E-Line (TO-92 style)
^p
DIMENSION
A
B
C
0
E
F
G
L
MILLIMETRES
MIN MAX
INCHES
MIN MAX
0.41 0.495 0.016 00195
0.41 0.495 0.016 0,0195
3,61 4.01 0.142 0. 158
4.37 4.77 0.172 0.188
2.16 2.41 0.085 0.095
2.5 0,098
1.27 NOM
0.050 NOM
12 06 13 97 0 475 0,550


Part Number VP0106ND
Description P-Channel Enhancement-Mode Vertical DMOS Power FET
Maker New Jersey Semiconductor
Total Page 1 Pages
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