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Nihon Inter Electronics
Nihon Inter Electronics

PRHMB300B12 Datasheet Preview

PRHMB300B12 Datasheet

IGBT MODULE

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PRHMB300B12 pdf
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IGBT MODULE Chopper 300A 1200V
CIRCUIT
OUTLINE DRAWING
PRHMB300B12
2- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PRHMB300B12
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
FTOR
1200
+/ - 20
300
600
1600
-40 to +150
-40 to +125
2500
3
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
ICES VCE=1200V,VGE=0V
-
Gate-Emitter Leakage Current
IGES VGE=+/- 20V,VCE=0V
-
Collector-Emitter Saturation Voltage
VCE(sat) IC=300A,VGE=15V
-
Gate-Emitter Threshold Voltage
VGE(th) VCE=5V,IC=300mA
4.0
Input Capacitance
Cies VCE=10V,VGE=0V,f=1MHz
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr VCC= 600V
ton RL= 2 ohm
tf RG= 1.3 ohm
toff VGE= +/- 15V
-
-
-
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
IF
IFM
300
400
Approximate Weight : 450g
Unit
V
V
A
W
°C
°C
V
Nm
Typ.
-
-
1.9
-
25000
0.25
0.40
0.25
0.80
Max.
6.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
VF
Reverse Recovery Time
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=300A,VGE=0V
IF=300A,VGE=-10V,di/dt=600A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
- 0.2 0.3 µs
Min. Typ. Max. Unit
-
-
-
-
0.086
0.16
°C/W
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Nihon Inter Electronics
Nihon Inter Electronics

PRHMB300B12 Datasheet Preview

PRHMB300B12 Datasheet

IGBT MODULE

No Preview Available !

PRHMB300B12 pdf
www.DataSheet.co.kr
PRHMB300B12
Fig.1- Output Characteristics (Typical)
600
VGE=20V
12V
TC=25
10V
500 15V
400
9V
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
8V
7V
2468
Collector to Emitter Voltage VCE (V)
10
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125
I C= 1 5 0 A
600A
300A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
50000
Cies
VGE=0V
f= 1 MHZ
TC=25
20000
10000
5000
Coes
2000
1000 Cres
500
200
100 0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
Fig.2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
16 TC=25
IC=100A
600A
14
300A
12
10
8
6
4
2
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
800
RL=2Ω
TC=25
700
16
14
600 12
500 10
400 8
VCE=600V
300 6
400V
200 4
200V
100 2
00
0 400 800 1200 1600 2000 2400
Total Gate Charge Qg (nC)
Fig.6- Collector Current vs. Switching Time (Typical)
1.4
1.2
1 tOFF
VCC=600V
RG=1.3 Ω
VGE=±15V
TC=25
0.8
0.6 tf
0.4
0.2 tON
tr
00
50
100 150 200
Collector Current IC (A)
250
300
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Part Number PRHMB300B12
Description IGBT MODULE
Maker Nihon Inter Electronics
Total Page 3 Pages
PDF Download
PRHMB300B12 pdf
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