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Nihon Inter Electronics
Nihon Inter Electronics

PRHMB300E6C Datasheet Preview

PRHMB300E6C Datasheet

IGBT MODULE

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PRHMB300E6C pdf
www.DataSheet.co.kr
IGBT Module-Chopper
□ 回 路 図 : CIRCUIT
(C2E1)
1
(E2)
2
7(G2)
(C1) 6(E2)
3
300A,600V
PRHMB300E6
PRHMB300E6C
□ 外 形 寸 法 図 : OUTLINE DRAWING
3-M6
108
93 ±0.25
14 11 14 11 14
4-Ø 6.5
1 2 37
6
94.0
80 ±0.25
12.0 11.0 12.0 11.0 12.0
123
2-Ø6.5
7
6
25 25 24
16 9 16 9 16
3-M5
23.0
23.0 17.0
14 9 14 9 14
4-fasten tab
#110 t=0.5
LABEL
LABEL
PRHMB300E6
PRHMB300E6C
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コレクタ電流
Collector Current
コレクタ損失
Collector Power Dissipation
DC
1ms
Symbol
CES
GES
CP
Rated Value
600
±20
300
600
1,040
Unit
接合温度
Junction Temperature Range
-40~+150
保存温度
Storage Temperature Range
stg
-40~+125
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
ISO
tor
PDMB3006
2,500
3(30.6)
3(30.6)
PDMB300E6C
3(30.6)
2(20.4)
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
コレクタ遮断電流
Collector-Emitter Cut-Off Current
ゲート漏れ電流
Gate-Emitter Leakage Current
Symbol Test Condition
CES
CE= 600V, VGE= 0V
GES
GE= ±20V,VCE= 0V
Min.
Typ.
Max. Unit
1.0
mA
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 300A,VGE= 15V
2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 300mA
4.0
8.0
入力容量
Input Capacitance
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
ies
on
off
CE= 10V,VGE= 0V,f= 1MH
CC= 300V
= 1.0Ω
= 3.6Ω
GE= ±15V
- 15,000 -
pF
- 0.15 0.40
0.30 0.75
0.10 0.35
μs
- 0.40 0.80
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
順電流
Forward Current
Item
DC
1ms
Symbol
FM
Rated Value
300
600
Unit
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 300A,VGE= 0V
= 300A,VGE= -10V
di/dt= 600A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.12
0.24
Unit
℃/W
00
Datasheet pdf - http://www.DataSheet4U.net/



Nihon Inter Electronics
Nihon Inter Electronics

PRHMB300E6C Datasheet Preview

PRHMB300E6C Datasheet

IGBT MODULE

No Preview Available !

PRHMB300E6C pdf
www.DataSheet.co.kr
PRHMB300E6
PRHMB300E6C
600
500
400
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=150A
600A
300A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
600
500
400
300
200
100
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=150A
300A
600A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=1.0(
350 TC=25°C
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0
200
400
600
800
1000
1200
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
30000
Cies
VGE=0V
f=1MHZ
TC=25°C
10000
3000
Coes
Cres
1000
300
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
日本インター株式会社
00
Datasheet pdf - http://www.DataSheet4U.net/


Part Number PRHMB300E6C
Description IGBT MODULE
Maker Nihon Inter Electronics
Total Page 4 Pages
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PRHMB300E6C pdf
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