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Nihon Inter Electronics
Nihon Inter Electronics

prhmb150e6 Datasheet Preview

prhmb150e6 Datasheet

IGBT

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prhmb150e6 pdf
IGBT Module-Chopper
□ 回 路 図 : CIRCUIT
150 A,600V
PRHMB150E6
PRHMB150E6C
□ 外 形 寸 法 図 : OUTLINE DRAWING
(C2E1)
1
(E2)
2
7(G2)
(C1) 6(E2)
3
94.0
80 ±0.25
12.0 11.0 12.0 11.0 12.0
123
2-Ø6.5
7
6
94
80 ± 0 .2 5
12 11 12 11 12
12 3
2-Ø 5.5
7
6
3-M5
23.0
23.0 17.0
14 9 14 9 14
3-M5
4-fasten tab
#110 t=0.5
23 23 17
16 7 16 7 16
4-fasten tab
#110 t= 0.5
LABEL
LABEL
PRHMB150E6
PRHMB150E6C
Dimension:[mm]
□ 最 大 定 格 : MAXIMUM RATINGS (T=25℃)
Item
コレクタ・エミッタ間電圧
Collector-Emitter Voltage
ゲ ー ト・エ ミ ッ タ 間 電 圧
Gate-Emitter Voltage
コレクタ電流
Collector Current
コレクタ損失
Collector Power Dissipation
DC
1ms
Symbol
CES
GES
CP
Rated Value
600
±20
150
300
560
Unit
接合温度
Junction Temperature Range
-40~+150
保存温度
Storage Temperature Range
stg
-40~+125
絶 縁 耐 圧(Terminal to Base AC,1minute)
Isolation Voltage
締 め 付 け ト ル ク Module Base to Heatsink
Mounting Torque
Busbar to Main Terminal
ISO
tor
PDMB150E6
2,500
3(30.6)
3(30.6)
PDMB150E6C
3(30.6)
2(20.4)
(RMS)
N・m
(kgf・cm)
□ 電 気 的 特 性 : ELECTRICAL CHARACTERISTICS (T=25℃)
Characteristic
コレクタ遮断電流
Collector-Emitter Cut-Off Current
ゲート漏れ電流
Gate-Emitter Leakage Current
Symbol Test Condition
CES
CE= 600V, VGE= 0V
GES
GE= ±20V,VCE= 0V
Min.
Typ.
Max. Unit
1.0
mA
- - 1.0 μA
コレクタ・エミッタ間飽和電圧
Collector-Emitter Saturation Voltage
CE(sat) = 150A,VGE= 15V
2.1 2.6
ゲ ー ト しきい値電圧
Gate-Emitter Threshold Voltage
GE(th)
CE= 5V,I= 150mA
4.0
8.0
入力容量
Input Capacitance
スイッチング時間
Switching Time
上昇時間
ターンオン時間
下降時間
ターンオフ時間
Rise Time
Turn-on Time
Fall Time
Turn-off Time
ies
on
off
CE= 10V,VGE= 0V,f= 1MH
CC= 300V
= 2.0Ω
= 5.1Ω
GE= ±15V
- 7,500 - pF
- 0.15 0.30
0.25 0.40
0.10 0.35
μs
- 0.35 0.70
□フリーホイーリングダイオードの 特 性: FREE WHEELING DIODE RATINGS & CHARACTERISTICS(T=25℃)
順電流
Forward Current
Item
DC
1ms
Symbol
FM
Rated Value
150
300
Unit
Characteristic
順電圧
Peak Forward Voltage
逆回復時間
Reverse Recovery Time
Symbol Test Condition
rr
= 150A,VGE= 0V
= 150A,VGE= -10V
di/dt= 300A/μs
□ 熱 的 特 性 : THERMAL CHARACTERISTICS
Characteristic
熱抵抗
IGBT
Thermal Impedance
Diode
Symbol Test Condition
Rth(j-c)
Junction to Case
(Tc測定点チップ直下)
日本インター株式会社
Min.
Typ.
1.9
Max. Unit
2.4
- 0.15 0.25 μs
Min.
Typ.
Max.
0.22
0.45
Unit
℃/W
00



Nihon Inter Electronics
Nihon Inter Electronics

prhmb150e6 Datasheet Preview

prhmb150e6 Datasheet

IGBT

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prhmb150e6 pdf
PRHMB150E6
PRHMB150E6C
300
250
200
150
100
50
0
0
16
14
12
10
8
6
4
2
0
0
Fig.1- Output Characteristics (Typical)
TC=25°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=25°C
IC=60A
300A
150A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
300
250
200
150
100
50
0
0
16
14
12
10
8
6
4
2
0
0
Fig.2- Output Characteristics (Typical)
TC=125°C
VGE=20V
12V
15V
11V
10V
9V
8V
1234
Collector to Emitter Voltage VCE (V)
5
Fig.4- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage (Typical)
TC=125°C
IC=60A
150A
300A
4 8 12 16
Gate to Emitter Voltage VGE (V)
20
Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical)
400
RL=2.0(
350 TC=25°C
16
14
300 12
250 10
200
VCE=300V
8
150
200V
6
100
100V
4
50 2
00
0 100 200 300 400 500 600
Total Gate Charge Qg (nC)
Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical)
100000
30000
VGE=0V
f=1MHZ
TC=25°C
10000
Cies
3000
1000
Coes
Cres
300
100
0.1 0.2
0.5 1 2
5 10 20
50 100 200
Collector to Emitter Voltage VCE (V)
日本インター株式会社
00


Part Number prhmb150e6
Description IGBT
Maker Nihon Inter Electronics
Total Page 4 Pages
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