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  ON Semiconductor Electronic Components Datasheet  

MGP15N40CL Datasheet

Internally Clamped N-Channel IGBT

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MGP15N40CL pdf
MGP15N40CL,
MGB15N40CL,
MGC15N40CL
Internally Clamped
N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current–Continuous
@ TC = 25°C
VCES
VCER
VGE
IC
440
440
22
15
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD 136
1.0
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
Unit
VDC
VDC
VDC
ADC
Watts
W/°C
°C
http://onsemi.com
N–CHANNEL IGBT
15 A, 410 V
VCE(on) = 1.8 V MAX
C
G RG
RGE
E
MARKING
DIAGRAMS
G
CE
TO–220
CASE 221A
STYLE 9
GP15N40CL
ALYYWW
D2PAK
CASE 418B
STYLE 3
GB15N40CL
ALYYWW
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MGP15N40CL
TO–220
50 Units/Rail
MGB15N40CLT4 D2PAK 800 Tape & Reel
MGC15N40CL Die Options Not Applicable
1 Publication Order Number:
MGP15N40CL/D


  ON Semiconductor Electronic Components Datasheet  

MGP15N40CL Datasheet

Internally Clamped N-Channel IGBT

No Preview Available !

MGP15N40CL pdf
MGP15N40CL, MGB15N40CL, MGC15N40CL
tUNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TJ 150°C)
Characteristic
Symbol
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A, L = 3 mH, Starting TJ = 150°C
THERMAL CHARACTERISTICS
EAS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TO–220
D2PAK
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
RθJC
RθJA
RθJA
TL
Value
300
150
Value
1.0
62.5
50
275
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector–Emitter Leakage Current
Gate–Emitter Clamp Voltage
Gate–Emitter Leakage Current
Gate Resistor (Optional)
Gate Emitter Resistor
ON CHARACTERISTICS*
BVCES
ICES
IECS
BVGES
IGES
RG
RGE
IC = 2 mA
TJ = –40°C to 175°C
VCE = 350 V,
VGE = 0, TJ = 25°C
VCE = 350 V,
VGE = 0, TJ = 150°C
VCE = –24 V
IG = 5 mA
VGE = 10 V
Gate Threshold Voltage
Threshold Temperature Coefficient (Negative)
VGE(th)
IC = 1 mA
VGE = VCE
Collector–to–Emitter On–Voltage
Collector–to–Emitter On–Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
VCE(on)
VCE(on)
gfs
IC = 6 A, VGE = 4 V
IC = 10 A,
VGE = 4.5 V,
TJ = 150°C
VCE = 5 V, IC = 6 A
Input Capacitance
Output Capacitance
Transfer Capacitance
v v*Pulse Test: Pulse Width 300 µS, Duty Cycle 2%.
CISS
COSS
CRSS
VCC = 15 V
VGE = 0 V
f = 1 MHz
Min
380
17
384
10
1.0
8.0
Typ
410
1.0
10
0.35
20
550
70
18
1.6
4.4
1.25
1.45
15
700
130
3.5
Unit
mJ
Unit
°C/W
°C
Max Unit
440 VDC
40 µADC
200
1.0
22
1000
26
mA
VDC
µADC
k
2.1 VDC
– mV/°C
1.8 VDC
1.8 VDC
– Mhos
– pF
http://onsemi.com
2


Part Number MGP15N40CL
Description Internally Clamped N-Channel IGBT
Maker ON
Total Page 8 Pages
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