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MGP21N60E Datasheet

Insulated Gate Bipolar Transistor

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MGP21N60E pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
Industry Standard TO–220 Package
High Speed: Eoff = 65 mJ/A typical at 125°C
High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
Low On–Voltage 2.1 V typical at 20 A, 125°C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
C
G
E
Order this document
by MGP21N60E/D
MGP21N60E
IGBT IN TO–220
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
G
C
E
CASE 221A–09
STYLE 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
±20 Vdc
31 Adc
21
42 Apk
142 Watts
1.14 W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
TJ, Tstg
tsc
– 55 to 150
10
°C
ms
RθJC
RθJA
TL
0.9
65
260
10 lbfSin (1.13 NSm)
°C/W
°C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
© MMoototororloa,laIncIG. 1B99T7 Device Data
1


  ON Semiconductor Electronic Components Datasheet  

MGP21N60E Datasheet

Insulated Gate Bipolar Transistor

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MGP21N60E pdf
MGP21N60E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
870
Vdc
— mV/°C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
V(BR)ECS
15
— Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
ICES
µAdc
— — 10
— — 200
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
IGES
— — 50 mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 20 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VCE(on)
Vdc
— 1.7 2.1
— 1.5 —
— 2.2 2.5
VGE(th)
Vdc
4.0 6.0 8.0
— 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
gfe — 8.6 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
— 1605 —
— 146 —
— 23 —
pF
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 )
Energy losses include “tail”
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
— 29 — ns
— 60 —
— 238 —
— 140 —
0.80 1.15
mJ
— 28 — ns
— 62 —
— 338 —
— 220 —
— 1.3 — mJ
— 86 — nC
— 18 —
— 39 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25from package to emitter bond pad)
LE
nH
— 7.5 —
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2 Motorola IGBT Device Data


Part Number MGP21N60E
Description Insulated Gate Bipolar Transistor
Maker ON
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