http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  ON Semiconductor Electronic Components Datasheet  

MGP7N60ED Datasheet

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

No Preview Available !

MGP7N60ED pdf
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
Industry Standard TO–220 Package
High Speed: Eoff = 70 mJ/A typical at 125°C
High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V
Low On–Voltage 2.0 V typical at 5.0 A, 125°C
Soft Recovery Free Wheeling Diode
is Included in the Package
Robust High Voltage Termination
G
ESD Protection Gate–Emitter Zener Diodes
C
E
Order this document
by MGP7N60ED/D
MGP7N60ED
IGBT & DIODE IN TO–220
7.0 A @ 90°C
10 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ON–VOLTAGE
G
C
E
CASE 221A–09
STYLE 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 M)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600 Vdc
600 Vdc
± 20 Vdc
10 Adc
7.0
14 Apk
81 Watts
0.65 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 )
tsc 10 ms
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
RθJC
RθJC
RθJA
1.5 °C/W
2.7
65
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
TL 260 °C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’sis a trademark of Motorola, Inc.
REV 1
© MMoototororloa,laIncIG. 1B99T8 Device Data
1


  ON Semiconductor Electronic Components Datasheet  

MGP7N60ED Datasheet

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

No Preview Available !

MGP7N60ED pdf
MGP7N60ED
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25 µAdc)
Temperature Coefficient (Positive)
V(BR)CES
600
870
Vdc
— mV/°C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)
ICES
IGES
µAdc
— — 10
— — 200
— — 50 mAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 2.5 Adc)
(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 5.0 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VCE(on)
Vdc
— 1.6 1.9
— 1.5 —
— 2.0 2.4
VGE(th)
Vdc
4.0 6.0 8.0
— 10 — mV/°C
Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc)
gfe — 2.5 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
— 610 —
— 60 —
— 10 —
pF
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
(VCC = 360 Vdc, IC = 5.0 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 )
Energy losses include “tail”
(VCC = 360 Vdc, IC = 5.0 Adc,
VGE = 15 Vdc, L = 300 mH,
RG = 20 Ω, TJ = 125°C)
Energy losses include “tail”
(VCC = 360 Vdc, IC = 5.0 Adc,
VGE = 15 Vdc)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
— 22 — ns
— 24 —
— 64 —
— 196 —
— 200 340 mJ
— 71 —
— 271 —
— 31 — ns
— 24 —
— 195 —
— 220 —
— 350 —
mJ
— 135 —
— 485 —
— 27.2 —
nC
— 7.0 —
— 13.7 —
2 Motorola IGBT Device Data


Part Number MGP7N60ED
Description Insulated Gate Bipolar Transistor withr Anti-Parallel Diode
Maker ON
Total Page 6 Pages
PDF Download
MGP7N60ED pdf
Download PDF File
[partsNo] view html
View PDF for Mobile






Related Datasheet

1 MGP7N60E Insulated Gate Bipolar Transistor Motorola
Motorola
MGP7N60E pdf
2 MGP7N60E Insulated Gate Bipolar Transistor ON
ON
MGP7N60E pdf
3 MGP7N60ED Insulated Gate Bipolar Transistor withr Anti-Parallel Diode ON
ON
MGP7N60ED pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components