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  ON Semiconductor Electronic Components Datasheet  

1N5819 Datasheet

(1N5817 - 1N5819) Axial Lead Rectifiers

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1N5819 pdf
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1N5817, 1N5818, 1N5819
1N5817 and 1N5819 are Preferred Devices
Axial Lead Rectifiers
This series employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low−voltage, high−frequency inverters, free wheeling diodes, and
polarity protection diodes.
Features
Extremely Low VF
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
These are Pb−Free Devices*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
ESD Ratings: Machine Model = C (>400 V)
Human Body Model = 3B (>8000 V)
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE
20, 30 and 40 VOLTS
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
1N581x
YYWWG
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 10
1
A =Assembly Location
1N581x =Device Number
x= 7, 8, or 9
YY =Year
WW =Work Week
G =Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
1N5817/D


  ON Semiconductor Electronic Components Datasheet  

1N5819 Datasheet

(1N5817 - 1N5819) Axial Lead Rectifiers

No Preview Available !

1N5819 pdf
1N5817, 1N5818, 1N5819
MAXIMUM RATINGS
Rating
Symbol 1N5817 1N5818 1N5819 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM 20 30 40 V
VRWM
VR
Non−Repetitive Peak Reverse Voltage
VRSM 24 36 48 V
RMS Reverse Voltage
VR(RMS)
14
21
28 V
Average Rectified Forward Current (Note 1), (VR(equiv) 0.2 VR(dc), TL = 90°C,
RqJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C)
IO
1.0 A
Ambient Temperature (Rated VR(dc), PF(AV) = 0, RqJA = 80°C/W)
Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,
half−wave, single phase 60 Hz, TL = 70°C)
TA
IFSM
85 80 75
25 (for one cycle)
°C
A
Operating and Storage Junction Temperature Range (Reverse Voltage applied)
TJ, Tstg
−65 to +125
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)
80 °C/W
Characteristic
Symbol 1N5817 1N5818 1N5819 Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 0.1 A)
(iF = 1.0 A)
(iF = 3.0 A)
vF
0.32 0.33 0.34
0.45 0.55
0.6
0.75 0.875
0.9
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(TL = 25°C)
(TL = 100°C)
1. Lead Temperature reference is cathode lead 1/32 in from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
IR
mA
1.0 1.0 1.0
10 10 10
http://onsemi.com
2


Part Number 1N5819
Description (1N5817 - 1N5819) Axial Lead Rectifiers
Maker ON Semiconductor
Total Page 7 Pages
PDF Download
1N5819 pdf
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