http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  ON Semiconductor Electronic Components Datasheet  

2N3442 Datasheet

High-Power Industrial Transistors

No Preview Available !

2N3442 pdf
2N3442
High−Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
Features
Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)
Excellent Second Breakdown Capability
Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Symbol
VCEO
VCB
VEB
IC
Value
140
160
7.0
10
15
Unit
Vdc
Vdc
Vdc
Adc
Base Current
− Continuous
− Peak
IB 7.0 Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C (Note 2)
PD
117 W
0.67 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
1.17 _C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
http://onsemi.com
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS − 117 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
2N3442G
AYWW
MEX
2N3442 = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
ORDERING INFORMATION
Device
Package
Shipping
2N3442
2N3442G
TO−204
TO−204
(Pb−Free)
100 Units / Tray
100 Units / Tray
Publication Order Number:
2N3442/D


  ON Semiconductor Electronic Components Datasheet  

2N3442 Datasheet

High-Power Industrial Transistors

No Preview Available !

2N3442 pdf
2N3442
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 140 Vdc, IB=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 7.0 Vdc, IC=0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 2.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain − Bandwidth Product (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Symbol Min Max
Unit
VCEO(sus)
140
Vdc
ICEO
− 200 mAdc
ICEX
IEBO
mAdc
− 5.0
− 30
− 5.0 mAdc
hFE
20 70
7.5 −
VCE(sat)
5.0 Vdc
VBE(on) − 5.7 Vdc
fT 80 − kHz
hfe 12 72 −
4. fT = |hfe| ftest
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2


Part Number 2N3442
Description High-Power Industrial Transistors
Maker ON Semiconductor
Total Page 4 Pages
PDF Download
2N3442 pdf
Download PDF File
2N3442 pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 2N3440 SILICON NPN TRANSISTORS STMicroelectronics
STMicroelectronics
2N3440 pdf
2 2N3440 HIGH VOLTAGE NPN TRANSISTORS Seme LAB
Seme LAB
2N3440 pdf
3 2N3440 HIGH VOLTAGE AMPLIFIERS Boca Semiconductor Corporation
Boca Semiconductor Corporation
2N3440 pdf
4 2N3440 NPN LOW POWER SILICON TRANSISTOR Microsemi Corporation
Microsemi Corporation
2N3440 pdf
5 2N3440 NPN HIGH VOLTAGE SILICON TRANSISTORS CDIL
CDIL
2N3440 pdf
6 2N3440 NPN Transistor Motorola
Motorola
2N3440 pdf
7 2N3440 Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor
2N3440 pdf
8 2N3440 (2N3439 / 2N3440) NPN HIGH VOLTAGE SILICON TRANSISTORS TRANSYS
TRANSYS
2N3440 pdf
9 2N3440 (2N3439 / 2N3440) High Voltage Transistor Comset Semiconductor
Comset Semiconductor
2N3440 pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components