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2SA2029M3T5G Datasheet

PNP Silicon General Purpose Amplifier Transistor

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2SA2029M3T5G
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High hFE, 210 −460 (Typical)
Low VCE(sat), < 0.5 V
ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
Available in 4 mm, 8000 Unit Tape & Reel
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
Collector−Emitter Voltage
V(BR)CEO
Emitter−Base Voltage
V(BR)EBO
Collector Current − Continuous
IC
THERMAL CHARACTERISTICS
−60
−50
−6.0
−100
Vdc
Vdc
Vdc
mAdc
Rating
Symbol Max Unit
Power Dissipation (Note 1)
PD 265 mW
Junction Temperature
TJ 150 °C
Storage Temperature Range
Tstg
−55 ~ + 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
http://onsemi.com
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
1
F9 M
F9 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
2SA2029M3T5G SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
November, 2004 − Rev. 1
1
Publication Order Number:
2SA2029M3/D


  ON Semiconductor Electronic Components Datasheet  

2SA2029M3T5G Datasheet

PNP Silicon General Purpose Amplifier Transistor

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2SA2029M3T5G pdf
2SA2029M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector−Base Breakdown Voltage (IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
− Vdc
Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
− Vdc
Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
− Vdc
Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0)
ICBO − − −0.5 nA
Emitter−Base Cutoff Current (VEB = −7.0 Vdc, IB = 0)
IEBO − − −0.1 mA
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
Vdc
− −0.5
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
120 − 560
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
fT MHz
− 140 −
Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
COB
− 3.5 − pF
http://onsemi.com
2


Part Number 2SA2029M3T5G
Description PNP Silicon General Purpose Amplifier Transistor
Maker ON Semiconductor
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