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  ON Semiconductor Electronic Components Datasheet  

2SC4134 Datasheet

Bipolar Transistor

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2SC4134 pdf
Ordering number : EN2510B
2SC4134
Bipolar Transistor
100V, 1A, Low VCE(sat), NPN Single TP/TP-FA
http://onsemi.com
Applications
Power supplies, relay drivers, lamp drivers
Features
Adoption FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Small and slim package permitting 2SC4134-applied sets to be made more compact
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
120 V
100 V
6V
1A
2A
Continued on next page.
Package Dimensions unit : mm (typ)
7518-003
Package Dimensions unit : mm (typ)
7003-003
6.5
5.0
4
2.3
0.5 2SC4134S-E
2SC4134T-E
6.5
5.0
4
2.3
0.5
2SC4134S-TL-E
2SC4134T-TL-E
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
C4134
RANK
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
1
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/9


  ON Semiconductor Electronic Components Datasheet  

2SC4134 Datasheet

Bipolar Transistor

No Preview Available !

2SC4134 pdf
2SC4134
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
0.8
10
150
--55 to +150
Unit
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=100V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=100mA
VCB=10V, f=1MHz
IC=400mA, IB=40mA
IC=400mA, IB=40mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
Ratings
min typ
100*
120
100
6
120
8.5
0.1
0.85
80
850
50
max
100
100
400*
0.4
1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
* : The 2SC4134 is classied by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
INPUT
PW=20μs
DC1%
50Ω
VR
IB1
IB2
RB
+
100μF
OUTPUT
+
470μF
RL
--5V 50V
IC=10IB1= --10IB2=400mA
Ordering Information
Device
2SC4134S-E
2SC4134T-E
2SC4134S-TL-E
2SC4134T-TL-E
Package
TP
TP
TP-FA
TP-FA
Shipping
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
memo
Pb Free
No.2510-2/9


Part Number 2SC4134
Description Bipolar Transistor
Maker ON Semiconductor
Total Page 9 Pages
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