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  ON Semiconductor Electronic Components Datasheet  

BD678 Datasheet

DARLINGTON POWER TRANSISTORS PNP SILICON

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BD678 pdf
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BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium−Power
Silicon PNP Darlingtons
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
High DC Current Gain −
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
Pb−Free Package are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
Vdc
BD676, BD676A
45
BD678, BD678A
60
BD680, BD680A
80
BD682
100
Collector-Base Voltage
VCB
Vdc
BD676, BD676A
45
BD678, BD678A
60
BD680, BD680A
80
BD682
100
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VEB
IC
IB
PD
TJ, Tstg
5.0
4.0
0.1
40
0.32
−55 to +150
Vdc
Adc
Adc
W
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
3.13 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLT, 40 WATT
321
TO−225AA
CASE 77
STYLE 1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
B
BD6xxG
BD6xx = Device Code
xx = 76, 76A, 78, 78A,
80, 80A, 82, or 82T
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 12
Publication Order Number:
BD676/D


  ON Semiconductor Electronic Components Datasheet  

BD678 Datasheet

DARLINGTON POWER TRANSISTORS PNP SILICON

No Preview Available !

BD678 pdf
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Breakdown Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, IB = 0)
BD676, 676A
BD678, 678A
BD680, 680A
BD682
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676, 678, 680, 682
BD676A, 678A, 680A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, IB = 30 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, IB = 40 mAdc)
BD678, 680, 682
BD676A, 678A, 680A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD678, 680, 682
BD676A, 678A, 680A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
BVCEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
hfe
Min Max Unit
45 − Vdc
60 −
80 −
100 −
− 500 mAdc
mAdc
− 0.2
− 2.0
− 2.0 mAdc
750 −
750 −
− 2.5 Vdc
− 2.8
Vdc
− 2.5
− 2.5
1.0 − −
50
45
40
35
30
25
20
15
10
5.0
0
15
30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
165
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
BONDING WIRE LIMIT
THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
2.0 5.0 10 20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
100
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
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2


Part Number BD678
Description DARLINGTON POWER TRANSISTORS PNP SILICON
Maker ON Semiconductor
Total Page 4 Pages
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