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CAT25M01 Datasheet

1Mb SPI Serial CMOS EEPROM

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CAT25M01 pdf
CAT25M01
1 Mb SPI Serial CMOS
EEPROM
Description
The CAT25M01 is a 1M−bit Serial CMOS EEPROM device
internally organized as 128Kx8 bits. This features a 256−byte page
write buffer and supports the Serial Peripheral Interface (SPI)
protocol. The device is enabled through a Chip Select (CS) input. In
addition, the required bus signals are clock input (SCK), data input
(SI) and data output (SO) lines. The HOLD input may be used to pause
any serial communication with the CAT25M01 device. The device
features software and hardware write protection, including partial as
well as full array protection.
On−Chip ECC (Error Correction Code) makes the device suitable
for high reliability applications.
Features
10 MHz SPI Compatible
1.8 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
256−byte Page Write Buffer
Additional Identification Page with Permanent Write Protection
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection –
Protect 1/4, 1/2 or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial and Extended Temperature Range
8 lead SOIC and TSSOP Packages
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
VCC
SI
CS
WP
HOLD
SCK
CAT25M01
SO
VSS
Figure 1. Functional Symbol
www.onsemi.com
TSSOP−8
Y SUFFIX
CASE 948AL
SOIC−8
V SUFFIX
CASE 751BD
SOIC−8
X SUFFIX
CASE 751BE
PIN CONFIGURATION
CS 1
SO
WP
VSS
VCC
HOLD
SCK
SI
SOIC (V, X),
TSSOP (Y)
(Top View)
Pin Name
CS
SO
WP
VSS
SI
SCK
HOLD
VCC
PIN FUNCTION
Function
Chip Select
Serial Data Output
Write Protect
Ground
Serial Data Input
Serial Clock
Hold Transmission Input
Power Supply
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 2
1
Publication Order Number:
CAT25M01/D


  ON Semiconductor Electronic Components Datasheet  

CAT25M01 Datasheet

1Mb SPI Serial CMOS EEPROM

No Preview Available !

CAT25M01 pdf
CAT25M01
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min Units
NEND (Note 3) Endurance
1,000,000
Program / Erase Cycles
TDR Data Retention
100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS
(VCC = 1.8 V to 5.5 V, TA = −40°C to +85°C and VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min Max
ICCR
ICCW
Supply Current
(Read Mode)
Read, SO open /
−40°C to +85°C
Supply Current
(Write Mode)
Read, SO open /
−40°C to +125°C
Write, CS = VCC/
−40°C to +85°C
VCC = 1.8 V, fSCK = 5 MHz
VCC = 2.5 V, fSCK = 10 MHz
VCC = 5.5 V, fSCK = 10 MHz
2.5 V < VCC < 5.5 V,
fSCK = 10 MHz
1.8 V < VCC < 5.5 V
1.2
1.8
3
3
3
Write, CS = VCC/
−40°C to +125°C
2.5 V < VCC < 5.5 V
3
ISB1
ISB2
IL
ILO
VIL1
VIH1
VIL2
VIH2
VOL1
VOH1
VOL2
VOH2
Standby Current
Standby Current
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
VIN = GND or VCC,
CS = VCC, WP = VCC,
HOLD = VCC,
VCC = 5.5 V
TA = −40°C to +85°C
TA = −40°C to +125°C
VIN = GND or VCC,
CS = VCC, WP = GND,
HOLD = GND,
VCC = 5.5 V
TA = −40°C to +85°C
TA = −40°C to +125°C
VIN = GND or VCC
CS = VCC
VOUT = GND or VCC
VCC 2.5 V
VCC 2.5 V
VCC < 2.5 V
VCC < 2.5 V
VCC 2.5 V, IOL = 3.0 mA
VCC 2.5 V, IOH = −1.6 mA
VCC < 2.5 V, IOL = 150 mA
VCC < 2.5 V, IOH = −100 mA
1
3
3
5
−2 2
−2 2
−0.5
0.7VCC
−0.5
0.75VCC
VCC − 0.8V
VCC − 0.2V
0.3VCC
VCC + 0.5
0.25VCC
VCC + 0.5
0.4
0.2
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
www.onsemi.com
2


Part Number CAT25M01
Description 1Mb SPI Serial CMOS EEPROM
Maker ON Semiconductor
Total Page 14 Pages
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