
	ON Semiconductor Electronic Components Datasheet

DTC114Y Datasheet

NPN SILICON BIAS RESISTOR TRANSISTOR

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DTC114E SERIES

Preferred Devices

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the TO–92

package which is designed for through hole applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTOR

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Power Dissipation

@ TA = 25°C (1.)

Derate above 25°C

VCBO

VCEO

50 Vdc

100 mAdc

350 mW

2.81 mW/°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to

Ambient (surface mounted)

RθJA

357 °C/W

Operating and Storage

Temperature Range

TJ, Tstg

–55 to

+150

°C

Maximum Temperature for

Soldering Purposes,

Time in Solder Bath

260 °C

10 Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking R1 (K) R2 (K)

Shipping

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

∞

DTC143T

4.7

∞

DTD113E DTD113E 1.0 1.0

DTC123E DTC123E 2.2 2.2

DTC143E DTC143E 4.7 4.7

DTC143Z DTC143Z 4.7 47

5000/Box

1. Device mounted on a FR–4 glass epoxy printed circuit board using the

minimum recommended footprint.

COLLECTOR

BASE

EMITTER

CASE 29

TO–92 (TO–226)

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

May, 2000 – Rev. 0

Publication Order Number:

DTC114E/D


	ON Semiconductor Electronic Components Datasheet

DTC114Y Datasheet

NPN SILICON BIAS RESISTOR TRANSISTOR

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DTC114E SERIES

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max Unit

OFF CHARACTERISTICS

Collector–Base Cutoff Current (VCB = 50 V, IE = 0)

Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)

Emitter–Base Cutoff Current

(VEB = 6.0 V, IC = 0)

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

ICBO

ICEO

IEBO

—

— 100 nAdc

— 500 nAdc

— 0.5 mAdc

— 0.2

— 0.1

— 0.2

— 0.9

— 1.9

— 4.3

— 2.3

— 1.5

— 0.18

Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

—

— Vdc

Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO

—

— Vdc

ON CHARACTERISTICS (2.)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

hFE 35

160

3.0

8.0

100

140

350

5.0

200

—

Collector–Emitter Saturation Voltage

(IC = 10 mA, IE = 0.3 mA) DTC144E/DTC114Y

(IC = 10 mA, IB = 0.3 mA) DTD113E/DTC143E

(IC = 10 mA, IB = 5 mA) DTC123E

(IC = 10 mA, IB = 1 mA) DTC114T/DTC143T/

(IC = 10 mA, IB = 1 mA) DTC143Z/DTC124E

Output Voltage (on)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)

DTC114E

DTC124E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

DTC144E

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%

VCE(sat)

—

VOL

—

— 0.25 Vdc

Vdc

— 0.2

http://onsemi.com

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DTC114Y Datasheet

NPN SILICON BIAS RESISTOR TRANSISTOR

DTC114Y Datasheet

NPN SILICON BIAS RESISTOR TRANSISTOR

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