| Description | MOSFET – N-Channel, POWERTRENCH) 60 V, 50 A, 10.5 mW FDD10AN06A0 Features • RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Inje... |
| Features |
• RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A • Qg(tot) = 28 nC (Typ.), VGS = 10 V • Low Miller Charge • Low Qrr Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • This Device is Pb−Free, Halide Free and is RoHS Compliant Applications • Motor / Body Load Control • ABS Systems • Powertrain Management • Injection Systems • DC−DC Con... |
| Datasheet |
 FDD10AN06A0 Datasheet - 388.30KB |
