J309, J310
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate −Source Breakdown Voltage
(IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = −15 Vdc, VDS = 0, TA = 25°C)
(VGS = −15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
J309
J310
ON CHARACTERISTICS
Zero −Gate −Voltage Drain Current(1)
(VDS = 10 Vdc, VGS = 0)
J309
J310
Gate−Source Forward Voltage
(VDS = 0, IG = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Common−Source Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
J309
J310
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Gate Power Gain
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Gate Input Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common−Source Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Common−Source Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Common−Gate Forward Transconductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Common−Gate Output Conductance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
J309
J310
Gate−Drain Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
Gate−Source Capacitance
(VDS = 0, VGS = −10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
Re(yis)
Re(yos)
Gpg
Re(yfs)
Re(yig)
gfs
gos
gfg
gog
Cgd
Cgs
en
Min Typ Max Unit
−25 −
− Vdc
− − −1.0 nAdc
− − −1.0 mAdc
Vdc
−1.0 − −4.0
−2.0 − −6.5
mAdc
12 − 30
24 − 60
− − 1.0 Vdc
mmhos
− 0.7 −
− 0.5 −
− 0.25 − mmhos
− 16 − dB
− 12 − mmhos
− 12 − mmhos
mmhos
10000 − 20000
8000
− 18000
− − 250 mmhos
mmhos
− 13000 −
− 12000 −
mmhos
− 100 −
− 150 −
− 1.8 2.5 pF
− 4.3 5.0 pF
− 10 − nVń ǸHz
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