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  ON Semiconductor Electronic Components Datasheet  

MBR7030WTG Datasheet

Switch Mode Power Rectifier

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MBR7030WTG pdf
MBR7030WTG
Switch Mode
Power Rectifier
The Switch Mode power rectifier, a state−of−the−art device,
employs the use of the Schottky Barrier principle with a Platinum
barrier metal.
Features
Dual Diode Construction; Terminals 1 and 3 May Be Connected for
Parallel Operation at Full Rating
30 V Blocking Voltage
Low Forward Voltage Drop
Guardring for Stress Protection and High dv/dt Capability
175°C Operating Junction Temperature
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics
Case: Epoxy, Molded. Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Ratings: Machine Model, B (< 400 V)
Human Body Model, 3B (> 8000 V)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 100°C)
Per Leg
Per Device
VRRM
VRWM
VR
IF(AV)
30
35
70
V
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFRM
IFSM
70
500
A
A
Peak Repetitive Reverse Current
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg −55 to +175 °C
Operating Junction Temperature (Note 1) TJ −55 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
70 AMPERES, 30 VOLTS
1
2, 4
3
1
2
3
TO−247
CASE 340AL
MARKING DIAGRAM
MBR7030WT
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MBR7030WTG
Package
TO−247
(Pb−Free)
Shipping
30 Units/Rail
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 4
1
Publication Order Number:
MBR7030WT/D


  ON Semiconductor Electronic Components Datasheet  

MBR7030WTG Datasheet

Switch Mode Power Rectifier

No Preview Available !

MBR7030WTG pdf
MBR7030WTG
THERMAL CHARACTERISTICS (Per Diode)
Rating
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
RqJC
0.55 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
@ IF = 35 Amps, TC = 25°C
@ IF = 70 Amps, TC = 25°C
@ IF = 35 Amps, TC = 100°C
VF V
0.55
0.72
0.52
Instantaneous Reverse Current (Note 2)
@ Rated DC Voltage, TC = 25°C
@ Rated DC Voltage, TC = 100°C
IR mA
5.0
250
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0%
TYPICAL CHARACTERISTICS
100 1000
TJ = 150°C
10
TJ = 100°C
1
TJ = 25°C
100
10
1
0.1
0.01
0.1
0
TJ = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.001
0.0001
0
TJ = 150°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
30
http://onsemi.com
2


Part Number MBR7030WTG
Description Switch Mode Power Rectifier
Maker ON Semiconductor
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