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  ON Semiconductor Electronic Components Datasheet  

MGSF1N02ELT1 Datasheet

Power MOSFET

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MGSF1N02ELT1 pdf
MGSF1N02ELT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
NChannel SOT23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dcdc converters and power management in portable
and batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
PbFree Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
VDSS
20
GatetoSource Voltage Continuous
VGS ± 8.0
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
ID 750
IDM 2000
Total Power Dissipation @ TA = 25°C
PD 400
Operating and Storage Temperature Range TJ, Tstg 55 to 150
Thermal Resistance JunctiontoAmbient RqJA
300
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
http://onsemi.com
750 mAMPS, 20 VOLTS
RDS(on) = 85 mW
NChannel
3
1
2
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
1
SOT23
NE M G
G
CASE 318
STYLE 21
1
Gate
2
Source
NE = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MGSF1N02ELT1
Package
Shipping
SOT23 3000/Tape & Reel
MGSF1N02ELT1G SOT23 3000/Tape & Reel
PbFree
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MGSF1N02ELT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF1N02ELT1 Datasheet

Power MOSFET

No Preview Available !

MGSF1N02ELT1 pdf
MGSF1N02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateSource Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
GateSource Threshold Voltage (VDS = VGS, ID = 250 mAdc)
Static DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 1.0 A)
(VGS = 2.5 Vdc, ID = 0.75 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Output Capacitance
(VDS = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Transfer Capacitance
(VDG = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 5 Vdc, ID = 1.0 Adc,
RL = 5 W, RG = 6 W)
Fall Time
Total Gate Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.0 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2) (VGS = 0 Vdc, IS = 0.6 Adc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
0.5
Typ Max Unit
− − Vdc
mAdc
1.0
10
± 0.1
mAdc
1.0 Vdc
W
0.085
0.115
160
130
60
pF
6.0
26
117
105
6500
ns
pC
0.6 A
0.75
1.2 V
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
2
1.5
1
0.5
0
0.5
TJ = 150°C
25°C
− 55°C
0.8 1.1 1.4 1.7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
2.0
2
2.5 V
1.8 2.25 V 1.75 V
1.6 2.0 V
1.4
1.2
1.5 V
1
0.8
0.6
0.4 VGS = 1.25 V
0.2
0
0 0.5 1 1.5 2 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
http://onsemi.com
2


Part Number MGSF1N02ELT1
Description Power MOSFET
Maker ON Semiconductor
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