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  ON Semiconductor Electronic Components Datasheet  

MGSF1N02LT1G Datasheet

Power MOSFET

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MGSF1N02LT1G pdf
MGSF1N02L, MVGSF1N02L
Power MOSFET
750 mAmps, 20 Volts
NChannel SOT23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dcdc converters and power management in portable
and batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
MVGSF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
VDSS 20 Vdc
GatetoSource Voltage Continuous
VGS ± 20 Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp 10 ms)
ID 750 mA
IDM 2000
Total Power Dissipation @ TA = 25°C
PD 400 mW
Operating and Storage Temperature Range TJ, Tstg 55 to 150 °C
Thermal Resistance, JunctiontoAmbient RqJA
300 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
750 mAMPS, 20 VOLTS
RDS(on) = 90 mW
NChannel
3
1
2
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
1
SOT23
CASE 318
N2 M G
G
STYLE 21
1
Gate
2
Source
N2 = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MGSF1N02LT1G
SOT23 3000 / Tape &
(PbFree)
Reel
MVGSF1N02LT1G* SOT23 3000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 6
1
Publication Order Number:
MGSF1N02LT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF1N02LT1G Datasheet

Power MOSFET

No Preview Available !

MGSF1N02LT1G pdf
MGSF1N02L, MVGSF1N02L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mAdc)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 1.2 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 1.0 Adc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 6)
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
Typ Max Unit
− − Vdc
mAdc
1.0
10
±100
nAdc
1.7
0.075
0.115
2.4
0.090
0.130
Vdc
W
125 pF
120
45
2.5 ns
1.0
16
8.0
6000 pC
0.6 A
0.75
0.8 V
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
VDS = 10 V
2
1.5
1
- 55°C
TJ = 150°C
0.5
25°C
0
1 1.5 2 2.5 3 3.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
3
4V
2.5 3.5 V
2
1.5
3.25 V
VGS = 3.0 V
1 2.75 V
0.5 2.5 V
2.25 V
0
01 2
34
56
7 8 9 10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. OnRegion Characteristics
http://onsemi.com
2


Part Number MGSF1N02LT1G
Description Power MOSFET
Maker ON Semiconductor
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