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  ON Semiconductor Electronic Components Datasheet  

MGSF3442VT1 Datasheet

Power MOSFET

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MGSF3442VT1 pdf
MGSF3442VT1
Preferred Device
Power MOSFET
4 Amps, 20 Volts
N−Channel TSOP−6
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP−6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
Mounted on FR4 t  5 sec
VDSS
VGS
ID
IDM
PD
20
± 8.0
4.0
20
2.0
Operating and Storage Temperature
Range
TJ, Tstg − 55 to
150
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
62.5
260
Unit
Vdc
Vdc
A
W
°C
°C/W
°C
http://onsemi.com
4 AMPERES
20 VOLTS
RDS(on) = 70 m
N−Channel
1256
3
4
MARKING
DIAGRAM
4
5
6
3
2
1
TSOP−6
CASE 318G
STYLE 1
442 = Device Code
W = Work Week
442
W
PIN ASSIGNMENT
Drain Drain Source
6 54
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
MGSF3442VT1
TSOP−6 3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MGSF3442VT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF3442VT1 Datasheet

Power MOSFET

No Preview Available !

MGSF3442VT1 pdf
MGSF3442VT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 4.0 A)
(VGS = 2.5 Vdc, ID = 3.4 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 10 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 )
Fall Time
Gate Charge
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2.)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
0.6
Typ Max Unit
Vdc
−−
µAdc
− 1.0
− 5.0
±100
nAdc
0.058
0.072
0.070
0.095
Vdc
Ohms
90 − pF
50 −
10 −
8.0 20 ns
24 40
36 60
10 20
− − nC
− 1.0 A
− 5.0 A
− 1.2 V
http://onsemi.com
2


Part Number MGSF3442VT1
Description Power MOSFET
Maker ON Semiconductor
Total Page 8 Pages
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