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  ON Semiconductor Electronic Components Datasheet  

MGSF3442XT1 Datasheet

Small-Signal MOSFETs Single N-Channel Field Effect Transistors

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MGSF3442XT1 pdf
MGSF3442XT1
Preliminary Information
Low RDS(on) Small-Signal
MOSFETs Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High Cell
Density, HDTMOS process. Low rDS(on) assures minimal power loss
and conserves energy, making this device ideal for use in small power
management circuitry. Typical applications are dcdc converters,
power management in portable and batterypowered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Pulsed Drain Current (tp
10 μs)
VDSS
VGS
ID
IDM
20
± 8.0
1.7
20
Vdc
Vdc
A
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
PD
TJ, Tstg
400
55 to
150
mW
°C
Thermal Resistance JunctiontoAmbient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
300 °C/W
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Reel Size
MGSF3442XT1
7
MGSF3442XT3
13
Tape Width
8 mm embossed tape
8 mm embossed tape
Quantity
3000
10,000
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
NCHANNEL
ENHANCEMENTMODE
MOSFET
RDS(on) = 58 mΩ (TYP)
DD S
DDG
CASE 318G02, Style 1
TSOP 6 PLASTIC
1256
DRAIN
3
GATE
SOURCE
4
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1
Publication Order Number:
MGSF3442XT1/D


  ON Semiconductor Electronic Components Datasheet  

MGSF3442XT1 Datasheet

Small-Signal MOSFETs Single N-Channel Field Effect Transistors

No Preview Available !

MGSF3442XT1 pdf
MGSF3442XT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 10 μA)
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70°C)
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Static DraintoSource OnResistance
(VGS = 4.5 Vdc, ID = 1.7 A)
(VGS = 2.5 Vdc, ID = 1.3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Output Capacitance
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 10 Vdc, ID = 1.0 A,
VGEN = 10 V, RL = 10 Ω)
Fall Time
Gate Charge
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
0.6
Typ Max Unit
Vdc
−−
μAdc
1.0
5.0
±100
nAdc
0.058
0.072
0.070
0.095
Vdc
Ohms
90 pF
50
10
8.0 20
ns
24 40
36 60
10 20
− − nC
1.0 A
5.0 A
1.2 V
http://onsemi.com
2


Part Number MGSF3442XT1
Description Small-Signal MOSFETs Single N-Channel Field Effect Transistors
Maker ON Semiconductor
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