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  ON Semiconductor Electronic Components Datasheet  

MJ15016G Datasheet

Complementary Silicon High-Power Transistors

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MJ15016G pdf
2N3055AG (NPN),
MJ15015G (NPN),
MJ15016G (PNP)
Complementary Silicon
High-Power Transistors
These PowerBase complementary transistors are designed for high
power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads
requiring higher safe operating area than the 2N3055.
Features
High Current−Gain − Bandwidth
Safe Operating Area
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N3055AG
MJ15015G, MJ15016G
VCEO
60
120
Vdc
Collector−Base Voltage
2N3055AG
MJ15015G, MJ15016G
VCBO
100
200
Vdc
Collector−Emitter Voltage Base
Reversed Biased
2N3055AG
MJ15015G, MJ15016G
VCEV
100
200
Vdc
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Device Dissipation
@ TC = 25_C
2N3055AG
MJ15015G, MJ15016G
Derate above 25_C
2N3055AG
MJ15015G, MJ15016G
VEBO
IC
IB
PD
7.0
15
7.0
115
180
Vdc
Adc
Adc
W
W
0.65 W/_C
1.03 W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data. (2N3055A)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max Max Unit
1.52 0.98 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 7
1
http://onsemi.com
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60, 120 VOLTS − 115, 180 WATTS
PNP
CASE 3
NPN
CASE 3
BASE
1
BASE
1
EMITTER 2
EMITTER 2
CASE
2
1
TO−204 (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAMS
2N3055AG
AYWW
MEX
MJ1501xG
AYWW
MEX
2N3055A = Device Code
MJ1501x = Device Code
x = 5 or 6
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX
= Country of Origin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
2N3055A/D


  ON Semiconductor Electronic Components Datasheet  

MJ15016G Datasheet

Complementary Silicon High-Power Transistors

No Preview Available !

MJ15016G pdf
2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE(off) = 0 Vdc)
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
Collector Cutoff Current (Note 3)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc,
TC = 150_C)
Emitter Cutoff Current
(VEB = 7.0 Vdc, IC = 0)
SECOND BREAKDOWN (Note 3)
2N3055AG VCEO(sus)
MJ15015G, MJ15016G
2N3055AG
MJ15015G, MJ15016G
ICEO
2N3055AG
MJ15015G, MJ15016G
ICEV
2N3055AG
MJ15015G, MJ15016G
ICEV
2N3055AG
MJ15015G, MJ15016G
IEBO
Second Breakdown Collector Current with Base Forward Biased
(t = 0.5 s non−repetitive)
2N3055AG
(VCE = 60 Vdc)
MJ15015G, MJ15016G
ON CHARACTERISTICS (Note 2 and 3)
IS/b
DC Current Gain
(IC = 4.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 400 mAdc)
(IC = 10 Adc, IB = 3.3 Adc)
(IC = 15 Adc, IB = 7.0 Adc)
Base−Emitter On Voltage
(IC = 4.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS (Note 3)
hFE
VCE(sat)
VBE(on)
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
2N3055AG, MJ15015G
MJ15016G
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (2N3055AG only) (Note 3)
fT
Cob
RESISTIVE LOAD
Delay Time
Rise Time
Storage Time
(VCC = 30 Vdc, IC = 4.0 Adc,
IB1 = IB2 = 0.4 Adc,
tp = 25 ms Duty Cycle v 2%
Fall Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
td
tr
ts
tf
Min
60
120
1.95
3.0
10
20
5.0
0.7
0.8
2.2
60
Max
0.7
0.1
5.0
1.0
30
6.0
5.0
0.2
70
70
1.1
3.0
5.0
1.8
6.0
18
600
0.5
4.0
3.0
6.0
Unit
Vdc
mAdc
mAdc
mAdc
mAdc
Adc
Vdc
Vdc
MHz
pF
ms
ms
ms
ms
http://onsemi.com
2


Part Number MJ15016G
Description Complementary Silicon High-Power Transistors
Maker ON Semiconductor
Total Page 6 Pages
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