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  ON Semiconductor Electronic Components Datasheet  

MMBF4392LT1G Datasheet

JFET Switching Transistors

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MMBF4392LT1G pdf
MMBF4391LT1G,
SMMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
JFET Switching Transistors
NChannel
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS 30 Vdc
DrainGate Voltage
VDG
30 Vdc
GateSource Voltage
VGS 30 Vdc
Forward Gate Current
IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA
556 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0  0.75  0.062 in.
http://onsemi.com
3
1
2
SOT23
CASE 318
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
MARKING DIAGRAM
XXX M G
G
1
XXX = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 10
1
Publication Order Number:
MMBF4391LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBF4392LT1G Datasheet

JFET Switching Transistors

No Preview Available !

MMBF4392LT1G pdf
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
GateSource Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
OffState Drain Current
(VDS = 15 Vdc, VGS = 12 Vdc)
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C)
ON CHARACTERISTICS
ZeroGateVoltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
DrainSource OnVoltage
(ID = 12 mAdc, VGS = 0)
MMBF4391LT1, SMMBF4391LT1
(ID = 6.0 mAdc, VGS = 0)
MMBF4392LT1
(ID = 3.0 mAdc, VGS = 0)
MMBF4393LT1
Static DrainSource OnResistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALLSIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 0 Vdc, VGS = 15 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0 Vdc, VGS = 12 Vdc, f = 1.0 MHz)
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
VDS(on)
rDS(on)
Ciss
Crss
Min
30
4.0
2.0
0.5
50
25
5.0
Max Unit
Vdc
1.0 nAdc
0.20 mAdc
Vdc
10
5.0
3.0
1.0 nAdc
1.0 mAdc
mAdc
150
75
30
Vdc
0.4
0.4
0.4
W
30
60
100
pF
14
pF
3.5
ORDERING INFORMATION
Device
MMBF4391LT1G
Marking
6J
Package
SOT23
(PbFree)
Shipping
SMMBF4391LT1G*
MMBF4392LT1G
6J
SOT23
(PbFree)
3,000 / Tape & Reel
6K
SOT23
(PbFree)
MMBF4393LT1G
M6G
SOT23
(PbFree)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.
http://onsemi.com
2


Part Number MMBF4392LT1G
Description JFET Switching Transistors
Maker ON Semiconductor
Total Page 6 Pages
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