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  ON Semiconductor Electronic Components Datasheet  

MMBV809LT1 Datasheet

Silicon Tuning Diode

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MMBV809LT1 pdf
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MMBV809LT1
Preferred Device
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning
applications. It provides solid−state reliability in replacement of
mechanical tuning methods.
Features
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Available in 8 mm Tape and Reel
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Current
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
VR 20 Vdc
IF 20 mAdc
PD
225 mW
1.8 mW/°C
Junction Temperature
TJ
+125
°C
Storage Temperature Range
Tstg −55 to +125 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 Board 1.0 x 0.75 x 0.62 in.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
1
http://onsemi.com
4.5−6.1 pF VOLTAGE VARIABLE
CAPACITANCE DIODE
1
ANODE
3
CATHODE
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 8
MARKING DIAGRAM
5K M G
G
1
5K = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBV809LT1 SOT−23 3,000 / Tape & Reel
MMBV809LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBV809LT3 SOT−23 10,000 / Tape & Reel
MMBV809LT3G SOT−23 10,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBV809LT1/D


  ON Semiconductor Electronic Components Datasheet  

MMBV809LT1 Datasheet

Silicon Tuning Diode

No Preview Available !

MMBV809LT1 pdf
MMBV809LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic − All Types
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 15 Vdc)
V(BR)R 20 −
− Vdc
IR − − 50 nAdc
Ct, Diode Capacitance
VR = 2.0 Vdc, f = 1.0 MHz
pF
Device
Min Typ Max
MMBV809LT1
4.5 5.3 6.1
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
Q, Figure of Merit
VR = 3.0 Vdc
f = 500 MHz
Typ
75
CR, Capacitance Ratio
C2/C8
f = 1.0 MHz (Note 2)
Min Max
1.8 2.6
10
9
8
7
6
5
4
3
2
1
0
0.5 1
TYPICAL CHARACTERISTICS
1000
100
VR = 3 Vdc
TA = 25°C
2 3 45
8 10 15
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
10
0.1
1.0
f, FREQUENCY (GHz)
Figure 2. Figure of Merit
10
1000
VR = 3.0 Vdc
f = 1.0 MHz
800
600
400
0 0.2 0.4 0.6 0.8 1.0
f, FREQUENCY (GHz)
Figure 3. Series Resistance
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
1.2 −75 −50 −25
0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
http://onsemi.com
2


Part Number MMBV809LT1
Description Silicon Tuning Diode
Maker ON Semiconductor
Total Page 3 Pages
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