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  ON Semiconductor Electronic Components Datasheet  

MMJT9410 Datasheet

Bipolar Power Transistors NPN Silicon

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MMJT9410 pdf
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MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain −
hFE = 85 (Min) @ IC = 0.8 Adc
= 60 (Min) @ IC = 3.0 Adc
Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Base Current − Continuous
Collector Current − Continuous
− Peak
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1” sq.
(645 sq. mm) Collector pad on FR−4
bd material
Total PD @ TA = 25°C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCB
VEB
IB
IC
PD
TJ, Tstg
Value
30
45
± 6.0
1.0
3.0
5.0
3.0
24
1.7
0.75
−55 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
mW/°C
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient on
1” sq. (645 sq. mm) Collector pad on FR−4 bd
material
RqJC
RqJA
42 °C/W
75 °C/W
Thermal Resistance, Junction−to−Ambient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material
RqJA
165 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 6
1
http://onsemi.com
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
C 2,4
4
C
B1 E3
Schematic
BC E
123
Top View
Pinout
MARKING
1 DIAGRAM
SOT−223 (TO−261)
CASE 318E
STYLE 1
AYW
9410 G
G
1
A = Assembly Location
Y = Year
W = Work Week
9410 = Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MMJT9410
MMJT9410G
SOT−223
SOT−223
(Pb−Free)
1000 / Tape & Reel
1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMJT9410/D


  ON Semiconductor Electronic Components Datasheet  

MMJT9410 Datasheet

Bipolar Power Transistors NPN Silicon

No Preview Available !

MMJT9410 pdf
MMJT9410
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Min
Typ
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 mAdc, IB = 0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IE = 50 mAdc, IC = 0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VBE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 1)
VCEO(sus)
VEBO
ICER
IEBO
30
6.0
Vdc
−−
Vdc
−−
mAdc
− 20
− 200
mAdc
− 10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, IB = 0.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, IB = 0.3 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.2 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.2 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 1.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
hFE
Vdc
0.105
0.150
0.150
0.200
− − 0.450
Vdc
− − 1.25
Vdc
− − 1.10
85 200
80 −
60 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Capacitance
(VEB = 8.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain − Bandwidth Product (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz)
Cob pF
− 85 135
Cib pF
− 200 −
fT MHz
− 72 −
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
2. fT = |hFE| ftest
1.0 0.25
0.20
0.75
0.50
0.8 A
0.25
0.5 A
0.25 A
0
1.0
IC = 3.0 A
1.2 A
10 100
IB, BASE CURRENT (mA)
0.15
0.10
0.05
0
1000 1.0
IC = 0.25 A
1.2 A
0.8 A
0.5 A
10 100
IB, BASE CURRENT (mA)
1000
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
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2


Part Number MMJT9410
Description Bipolar Power Transistors NPN Silicon
Maker ON Semiconductor
Total Page 5 Pages
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