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  ON Semiconductor Electronic Components Datasheet  

MMVL409T1 Datasheet

Silicon Tuning Diode

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MMVL409T1 pdf
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MMVL409T1
Preferred Device
Silicon Tuning Diode
These devices are designed for general frequency control and tuning
applications. They provide solid–state reliability in replacement of
mechanical tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Surface Mount Package
Device Marking: X5
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VOLTAGE VARIABLE
CAPACITANCE DIODE
MAXIMUM RATINGS
Symbol
Rating
VR Continuous Reverse Voltage
IF Peak Forward Current
THERMAL CHARACTERISTICS
Symbol
Characteristic
PD Total Device Dissipation FR–5 Board,*
TA = 25°C
Derate above 25°C
RqJA Thermal Resistance Junction to Ambient
TJ, Tstg Junction and Storage Temperature
*FR–4 Minimum Pad
Value
20
200
Unit
Vdc
mAdc
Max Unit
200 mW
1.57 mW/°C
635 °C/W
150 °C
1
2
PLASTIC
SOD–323
CASE 477
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
MMVL409T1 SOD–323 3000 / Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
January, 2000 – Rev. 1
1
Publication Order Number:
MMVL409T1/D


  ON Semiconductor Electronic Components Datasheet  

MMVL409T1 Datasheet

Silicon Tuning Diode

No Preview Available !

MMVL409T1 pdf
MMVL409T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 µAdc)
V(BR)R
Reverse Voltage Leakage Current
(VR = 15 Vdc)
IR
Diode Capacitance Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0 MHz)
TCC
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Device
Min Nom Max
MMVL409T1
26 29 32
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
Min Typ Max Unit
20 — — Vdc
— — 0.1 µAdc
— 300 — ppm/°C
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
Min
200
CR, Capacitance Ratio
C3/C8
f = 1.0 MHz(1)
Min Max
1.5 1.9
TYPICAL CHARACTERISTICS
40 1000
32
f = 1.0 MHz
24 TA = 25°C
16
100
VR = 3 Vdc
TA = 25°C
8
0
1 23
10 20 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
10
100 10
100
f, FREQUENCY (MHz)
Figure 2. Figure of Merit
1000
100
60
20
10
6.0
2.0 VR = 15 Vdc
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
-60 -40 -20 0 +20 +40 +60 +80 +100 +120 +140
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
1.04
1.03
VR = 3.0 Vdc
f = 1.0 MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-75
-50 -25 0 +25 +50 +75 +100 +125
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
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2


Part Number MMVL409T1
Description Silicon Tuning Diode
Maker ON Semiconductor
Total Page 4 Pages
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