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  ON Semiconductor Electronic Components Datasheet  

MPSA13 Datasheet

(MPSA13 / MPSA14) Darlington Transistors NPN Silicon

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MPSA13 pdf
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MPSA13, MPSA14
MPSA14 is a Preferred Device
Darlington Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCES
VCBO
VEBO
IC
PD
30 Vdc
30 Vdc
10 Vdc
500 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
1.5
12
−55 to
+150
W
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Symbol
RqJA
Max
200
Unit
°C/mW
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/mW
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
COLLECTOR 3
BASE
2
EMITTER 1
MARKING DIAGRAM
1
23
TO−92
(TO−226AA)
CASE 29−11
STYLE 1
MPS
A1x
AYWWG
G
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 3
1
Publication Order Number:
MPSA13/D


  ON Semiconductor Electronic Components Datasheet  

MPSA13 Datasheet

(MPSA13 / MPSA14) Darlington Transistors NPN Silicon

No Preview Available !

MPSA13 pdf
MPSA13, MPSA14
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
MPSA13
MPSA14
MPSA13
MPSA14
Collector −Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
Base −Emitter On Voltage
(IC = 100 mAdc, VCE = 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2. fT = |hfe| S ftest.
Symbol
V(BR)CES
ICBO
IEBO
Min Max Unit
30 − Vdc
− 100 nAdc
− 100 nAdc
hFE
VCE(sat)
VBE(on)
5,000
10,000
10,000
20,000
1.5
− 2.0
Vdc
Vdc
fT 125 − MHz
ORDERING INFORMATION
Device
Package
Shipping
MPSA13
TO−92
5000 Units / Box
MPSA13G
TO−92
(Pb−Free)
5000 Units / Box
MPSA13RLRA
TO−92
2000 / Tape & Reel
MPSA13RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA13RLRM
TO−92
2000 / Ammo Pack
MPSA13RLRMG
TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA13RLRP
TO−92
2000 / Ammo Pack
MPSA13RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA13ZL1
TO−92
2000 / Ammo Pack
MPSA13ZL1G
TO−92
(Pb−Free)
2000 / Ammo Pack
MPSA14
TO−92
5000 Units / Box
MPSA14G
TO−92
(Pb−Free)
5000 Units / Box
MPSA14RLRA
TO−92
2000 / Tape & Reel
MPSA14RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPSA14RLRP
TO−92
2000 / Ammo Pack
MPSA14RLRPG
TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MPSA13
Description (MPSA13 / MPSA14) Darlington Transistors NPN Silicon
Maker ON Semiconductor
Total Page 6 Pages
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