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  ON Semiconductor Electronic Components Datasheet  

MUN5131DW1T1 Datasheet

(MUN5111DW1T1 Series) Dual Bias Resistor Transistors

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MUN5131DW1T1 pdf
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb−Free Packages are Available
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
− 5w0ww.DataSheeVt4Ud.ccom
−50 Vdc
−100
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 187 (Note 1) mW
256 (Note 2)
1.5 (Note 1) mW/°C
2.0 (Note 2)
Thermal Resistance,
Junction-to-Ambient
RqJA
670 (Note 1) °C/W
490 (Note 2)
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 250 (Note 1) mW
385 (Note 2)
2.0 (Note 1) mW/°C
3.0 (Note 2)
Thermal Resistance,
Junction-to-Ambient
RqJA
493 (Note 1) °C/W
325 (Note 2)
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1) °C/W
208 (Note 2)
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
1
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
xx M G
G
1
xx = Device Code (Refer to page 2)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN5111DW1T1/D


  ON Semiconductor Electronic Components Datasheet  

MUN5131DW1T1 Datasheet

(MUN5111DW1T1 Series) Dual Bias Resistor Transistors

No Preview Available !

MUN5131DW1T1 pdf
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5111DW1T1
SOT−363
0A 10 10
3000/Tape & Reel
MUN5111DW1T1G
SOT−363
(Pb−Free)
0A 10 10
3000/Tape & Reel
MUN5112DW1T1
SOT−363
0B 22 22
3000/Tape & Reel
MUN5112DW1T1G
SOT−363
(Pb−Free)
0B 22 22
3000/Tape & Reel
MUN5113DW1T1
SOT−363
0C 47 47
3000/Tape & Reel
MUN5113DW1T1G
SOT−363
(Pb−Free)
0C 47 47
3000/Tape & Reel
MUN5114DW1T1
SOT−363
0D 10 47
3000/Tape & Reel
MUN5114DW1T1G
SOT−363
(Pb−Free)
0D 10 47
3000/Tape & Reel
MUN5115DW1T1
SOT−363
0E 10
3000/Tape & Reel
MUN5115DW1T1G
SOT−363
(Pb−Free)
0E 10
3000/Tape & Reel
MUN5116DW1T1
SOT−363
0F 4.7
3000/Tape & Reel
MUN5116DW1T1G
SOT−363
(Pb−Free)
0F 4.7
3000/Tape & Reel
MUN5130DW1T1
SOT−363
0G 1.0 1.0
3000/Tape & Reel
MUN5130DW1T1G
SOT−363
(Pb−Free)
0G 1.0 1.0
3000/Tape & Reel
MUN5131DW1T1
SOT−363
0H 2.2 2.2
3000/Tape & Reel
MUN5131DW1T1G
SOT−363
(Pb−Free)
0H 2.2 2.2
3000/Tape & Reel
MUN5132DW1T1
SOT−363
0J 4.7 4.7
3000/Tape & Reel
MUN5132DW1T1G
SOT−363
(Pb−Free)
0J 4.7 4.7
3000/Tape & Reel
MUN5133DW1T1
SOT−363
0K 4.7 47
3000/Tape & Reel
MUN5133DW1T1G
SOT−363
(Pb−Free)
0K 4.7 47
3000/Tape & Reel
MUN5134DW1T1
SOT−363
0L 22 47
3000/Tape & Reel
MUN5134DW1T1G
SOT−363
(Pb−Free)
0L 22 47
3000/Tape & Reel
MUN5135DW1T1
SOT−363
0M 2.2 47
3000/Tape & Reel
MUN5135DW1T1G
SOT−363
(Pb−Free)
0M 2.2 47
3000/Tape & Reel
MUN5136DW1T1
SOT−363
0N 100 100
3000/Tape & Reel
MUN5136DW1T1G
SOT−363
(Pb−Free)
0N 100 100
3000/Tape & Reel
MUN5137DW1T1
SOT−363
0P 47 22
3000/Tape & Reel
MUN5137DW1T1G
SOT−363
(Pb−Free)
0P 47 22
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number MUN5131DW1T1
Description (MUN5111DW1T1 Series) Dual Bias Resistor Transistors
Maker ON Semiconductor
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