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  ON Semiconductor Electronic Components Datasheet  

NRTSAF360 Datasheet

Trench-based Schottky Rectifier

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NRTSAF360 pdf
NRTSAF360, NRVTSAF360
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Tablet Adapters, and Flat Panel
Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Automotive LED Lighting
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Weight: 95 mg (Approximately)
www.onsemi.com
TRENCH SCHOTTKY
RECTIFIER
3.0 AMPERE
60 VOLTS
SMA−FL
CASE 403AA
STYLE 6
MARKING DIAGRAM
3M6
AYWWG
3M6 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NRTSAF360T3G
NRVTSAF360T3G
Package
SMA−FL
(Pb−Free)
SMA−FL
(Pb−Free)
Shipping
5000 / Tape &
Reel
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 1
1
Publication Order Number:
NRTSAF360/D


  ON Semiconductor Electronic Components Datasheet  

NRTSAF360 Datasheet

Trench-based Schottky Rectifier

No Preview Available !

NRTSAF360 pdf
NRTSAF360, NRVTSAF360
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 143°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TL = 138°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
60
3.0
6.0
100
V
A
A
A
Storage Temperature Range
Tstg −65 to +175
°C
Operating Junction Temperature (Note 1)
TJ −55 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
Symbol
YJCL
RqJA
Value
24.5
81
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 3)
(IF = 3 A, TJ = 25°C)
(IF = 3 A, TJ = 125°C)
(IF = 6 A, TJ = 25°C)
VF
0.48 0.64
0.41 0.58
0.57 0.78
V
Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
4.5 50 mA
3.5 15 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 380 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number NRTSAF360
Description Trench-based Schottky Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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