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  ON Semiconductor Electronic Components Datasheet  

NRTST40H100CT Datasheet

Very Low Forward Voltage Trench-based Schottky Rectifier

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NRTST40H100CT pdf
NRTST40H100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These are Pb−Free Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
www.onsemi.com
VERY LOW FORWARD VOLT-
AGE, SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
100 VOLTS
PIN CONNECTIONS
1
2, 4
3
4
1
2
3
TO−220AB
CASE 221A
STYLE 6
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 0
AYWW
TS40H100G
AKA
A
Y
WW
AKA
G
TO−220AB
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1 Publication Order Number:
NRTST40H100CT/D


  ON Semiconductor Electronic Components Datasheet  

NRTST40H100CT Datasheet

Very Low Forward Voltage Trench-based Schottky Rectifier

No Preview Available !

NRTST40H100CT pdf
NRTST40H100CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 118°C)
(Rated VR, TC = 131°C)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 113°C)
(Rated VR, Square Wave, 20 kHz, TC = 128°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Per device
Per diode
Per device
Per diode
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
40
20
80
40
250
V
A
A
A
Operating Junction Temperature
TJ
−55 to +150
°C
Storage Temperature
Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance per Device (Note 1)
1. Assumes 150 mm2 1 oz. copper band pad, on a FR4 board.
Symbol NRTST40H100CTG Unit
Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
1.0 °C/W
69.3 °C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 10 A, TJ = 25°C)
(IF = 20 A, TJ = 25°C)
vF
0.58
V
0.73 0.76
(IF = 10 A, TJ = 125°C)
(IF = 20 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 2)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
0.53 −
0.65 0.68
IR
4
4
mA
− mA
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
16 50 mA
11 30 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
147 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NRTST40H100CTG
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
www.onsemi.com
2


Part Number NRTST40H100CT
Description Very Low Forward Voltage Trench-based Schottky Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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