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  ON Semiconductor Electronic Components Datasheet  

NRVB120VLSF Datasheet

Surface Mount Schottky Power Rectifier

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NRVB120VLSF pdf
MBR120VLSF,
NRVB120VLSF
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Guardring for Stress Protection
Optimized for Very Low Forward Voltage
125°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C;
Human Body Model, 3B
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Reel Options: MBR120VLSFT1G = 3,000 per 7reel/8 mm tape
MBR120VLSFT3G = 10,000 per 13reel/8 mm tape
Device Marking: L2V
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
SOD−123FL
CASE 498
MARKING DIAGRAM
L2VMG
G
L2V = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
MBR120VLSFT1G SOD−123FL 3000 / Tape &
(Pb−Free)
Reel
NRVB120VLSFT1G SOD−123FL 3000 / Tape &
(Pb−Free)
Reel
MBR120VLSFT3G SOD−123FL 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 4
1
Publication Order Number:
MBR120VLSFT1/D


  ON Semiconductor Electronic Components Datasheet  

NRVB120VLSF Datasheet

Surface Mount Schottky Power Rectifier

No Preview Available !

NRVB120VLSF pdf
MBR120VLSF, NRVB120VLSF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TL = 119°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
20
1.0
45
V
A
A
Storage Temperature Range
Tstg −65 to +125 °C
Operating Junction Temperature
TJ
−65 to +125
°C
Voltage Rate of Change (Rated VR)
dv/dt
1000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
Symbol
Rtjl
Rtjl
Rtja
Rtja
Value
26
21
325
82
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol TJ = 255C TJ = 855C Unit
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 0.1 A)
(IF = 0.5 A)
(IF = 1.0 A)
VF V
0.275
0.205
0.315
0.270
0.340
0.300
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage)
IR
0.60
mA
15
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
http://onsemi.com
2


Part Number NRVB120VLSF
Description Surface Mount Schottky Power Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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