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  ON Semiconductor Electronic Components Datasheet  

NRVB30H100MFST1G Datasheet

SWITCHMODE Power Rectifiers

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NRVB30H100MFST1G pdf
MBR30H100MFS,
NRVB30H100MFS
Switch-mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
Applications
Output Rectification in Compact Portable Consumer Applications
Freewheeling Diode used with Inductive Loads
Telecom Power Conversion
Automotive Freewheeling Diode
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
100 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
A
Not Used
B30H10
AYWZZ
C
C
B30H10 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package Shipping
MBR30H100MFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
MBR30H100MFST3G SO−8 FL
(Pb−Free)
NRVB30H100MFST1G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
NRVB30H100MFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2
1
Publication Order Number:
MBR30H100MFS/D


  ON Semiconductor Electronic Components Datasheet  

NRVB30H100MFST1G Datasheet

SWITCHMODE Power Rectifiers

No Preview Available !

NRVB30H100MFST1G pdf
MBR30H100MFS, NRVB30H100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 140°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
V
100
30 A
60 A
300 A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg
TJ
EAS
−65 to +175
−55 to +175
100
3B
°C
°C
mJ
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
1.6 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 15 A, TJ = 125°C)
(iF = 15 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
vF V
0.58 0.72
0.71 0.76
0.66 0.86
0.81 0.90
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR mA
5 15
0.005
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2


Part Number NRVB30H100MFST1G
Description SWITCHMODE Power Rectifiers
Maker ON Semiconductor
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