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  ON Semiconductor Electronic Components Datasheet  

NRVBB1060W1 Datasheet

SWITCHMODE Power Rectifier

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NRVBB1060W1 pdf
NRVBB1060,
NRVBB1060W1
Switch-mode Power
Rectifier
This switch−mode power rectifier uses the Schottky Barrier
principle with a platinum barrier metal. This state−of−the−art device
has the following features:
Features
Low Forward Voltage
175°C Operating Junction Temperature
Low Power Loss/High Efficiency
High Surge Capacity
For Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable
This is a Pb−Free Device
Applications
Power Supply − Output Rectification
Power Management
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 3
1
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 60 VOLTS
1
3
STYLE 3
4
1
3
STYLE 6
4
4
1
3
D2PAK
CASE 418B
STYLE 3, 6
MARKING DIAGRAMS
AY WW
B1060G
xKA
AY WW
1060W1G
xKA
NRVBB1060
NRVBB1060W1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
xKA = Diode Polarity
x = N or A
ORDERING INFORMATION
Device
Package Shipping
NRVBB1060T4G
D2PAK 800/Tape & Reel
(Pb−Free)
NRVBB1060W1T4G D2PAK 800/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NRVBB1060/D


  ON Semiconductor Electronic Components Datasheet  

NRVBB1060W1 Datasheet

SWITCHMODE Power Rectifier

No Preview Available !

NRVBB1060W1 pdf
NRVBB1060, NRVBB1060W1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current (Rated VR) TC = 133°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IF(AV)
IFRM
IFSM
10
20
150
A
A
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
Operating Junction Temperature (Note 1)
TJ
*65 to +175
°C
Storage Temperature
Tstg *65 to +175 °C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, TC = 125°C)
(iF = 10 Amps, TC = 25°C)
(iF = 20 Amps, TC = 125°C)
(iF = 20 Amps, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
RqJC
RqJA
vF
iR
2.0 °C/W
60 °C/W
V
0.7
0.8
0.85
0.95
mA
25
0.10
www.onsemi.com
2


Part Number NRVBB1060W1
Description SWITCHMODE Power Rectifier
Maker ON Semiconductor
Total Page 6 Pages
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