12 V, 150 mA, fT = 7 GHz, NPN Single
This RF transistor is designed for low noise amplifier applications. CPH
package is suitable for use under high temperature environment because it
has superior heat radiation characteristics. This RF transistor is AEC-Q101
qualified and PPAP capable for automotive applications.
High Gain (fT = 7 GHz typ)
High Current (IC = 150 mA)
Miniature and Thin 6 pin Package
Large Collector Dissipation (800 mW)
AEC-Q101 qualified and PPAP capable
Pb-Free, Halogen Free and RoHS compliance
Low Noise Amplifier for FM Radio
Low Noise Amplifier for TV
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Dissipation (Note 2)
Operating Junction and
55 to +150
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate (250 mm2 0.8 mm).
12 V, 150 mA
fT = 7 GHz typ.
1, 2, 5, 6
1 : Collector
2 : Collector
3 3 : Base
4 : Emitter
5 : Collector
4 6 : Collector
1 2 3 CPH6
See detailed ordering and shipping
information on page 6 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
August 2016 - Rev. P1
Publication Order Number :