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  ON Semiconductor Electronic Components Datasheet  

NSVF6003SB6 Datasheet

RF Transistor

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NSVF6003SB6 pdf
NSVF6003SB6
Advance Information
RF Transistor
12 V, 150 mA, fT = 7 GHz, NPN Single
This RF transistor is designed for low noise amplifier applications. CPH
package is suitable for use under high temperature environment because it
has superior heat radiation characteristics. This RF transistor is AEC-Q101
qualified and PPAP capable for automotive applications.
Features
High Gain (fT = 7 GHz typ)
High Current (IC = 150 mA)
Miniature and Thin 6 pin Package
Large Collector Dissipation (800 mW)
AEC-Q101 qualified and PPAP capable
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Low Noise Amplifier for FM Radio
Low Noise Amplifier for TV
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
12
Emitter to Base Voltage
VEBO
2
Collector Current
IC 150
Collector Dissipation (Note 2)
Operating Junction and
Storage Temperature
PC
Tj, Tstg
800
55 to +150
Unit
V
V
V
mA
mW
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : Surface mounted on ceramic substrate (250 mm2 0.8 mm).
www.onsemi.com
12 V, 150 mA
fT = 7 GHz typ.
RF Transistor
ELECTRICAL CONNECTION
NPN
1, 2, 5, 6
1 : Collector
2 : Collector
3 3 : Base
4 : Emitter
5 : Collector
4 6 : Collector
MARKING
654
1 2 3 CPH6
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2016
August 2016 - Rev. P1
1
Publication Order Number :
NSVF6003SB6/D


  ON Semiconductor Electronic Components Datasheet  

NSVF6003SB6 Datasheet

RF Transistor

No Preview Available !

NSVF6003SB6 pdf
NSVF6003SB6
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3)
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Gain
Noise Figure
ICBO
IEBO
hFE
fT
Cob
Cre
| S21e |2
NF
VCB = 10 V, IE = 0 A
VEB = 1 V, IC = 0 A
VCE = 5 V, IC = 50 mA
VCB = 10 V, f = 1 MHz
VCE = 5 V, IC = 50 mA, f = 1 GHz
VCE = 5 V, IC = 5 0mA, f = 1 GHz
Value
min typ
100
7
1.3
0.9
9.0
1.8
max
1.0
10
180
2.0
3.0
Unit
A
A
GHz
pF
pF
dB
dB
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 4 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
www.onsemi.com
2


Part Number NSVF6003SB6
Description RF Transistor
Maker ON Semiconductor
Total Page 6 Pages
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