http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  ON Semiconductor Electronic Components Datasheet  

NTMFD4C86N Datasheet

Dual N-Channel SO8FL

No Preview Available !

NTMFD4C86N pdf
NTMFD4C86N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 20 A / Low Side 32 A
Features
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC−DC Converters
System Voltage Rails
Point of Load
www.onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
RDS(on) MAX
5.4 mW @ 10 V
8.1 mW @ 4.5 V
2.6 mW @ 10 V
3.4 mW @ 4.5 V
ID MAX
20 A
32 A
D1 (3, 4, 9)
Figure 1. Typical Application Circuit
100
95
90
85
80 VIN = 12 V
VOUT = 1.2 V
75 VGS = 5 V
FSW = 300 kHz
70 TA = 25°C
0 5 10 15 20 25
LOAD CURRENT (A)
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
D1 4
D1 3 9 10
D1 S2
S1 2
G1 1
5 SW
6 SW
7 SW
8 G2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
4C86N
CASE 506CR
AYWZZ
1
4C86N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
Publication Order Number:
NTMFD4C86N/D


  ON Semiconductor Electronic Components Datasheet  

NTMFD4C86N Datasheet

Dual N-Channel SO8FL

No Preview Available !

NTMFD4C86N pdf
NTMFD4C86N
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Q1 VDSS 30 V
Drain−to−Source Voltage
Q2
Gate−to−Source Voltage
Gate−to−Source Voltage
Q1 VGS
Q2
±20 V
Continuous Drain Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
14.8
10.7
A
23.7
17.1
1.89 W
Continuous Drain Current RqJA 10 s (Note 1)
Power Dissipation
RqJA 10 s (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
20.2
14.5
A
32.3
23.3
3.51 W
Continuous Drain Current
RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25 °C
Q1
Q2
Q1
Q2
ID
PD
11.3
8.1
A
18.1
13.0
1.10 W
Pulsed Drain Current
TA = 25°C
tp = 10 ms
Q1
Q2
IDM
160 A
280
Operating Junction and Storage Temperature
Q1 TJ, TSTG
Q2
−55 to +150
°C
Source Current (Body Diode)
Q1 IS
Q2
10 A
10
Drain to Source DV/DT
dV/dt
6 V/ns
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C,
VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IL = 20 Apk
IL = 40 Apk
Q1
Q2
EAS
EAS
TL
20 mJ
80
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
www.onsemi.com
2


Part Number NTMFD4C86N
Description Dual N-Channel SO8FL
Maker ON Semiconductor
Total Page 12 Pages
PDF Download
NTMFD4C86N pdf
Download PDF File
NTMFD4C86N pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 NTMFD4C86N Dual N-Channel SO8FL ON Semiconductor
ON Semiconductor
NTMFD4C86N pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components