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  ON Semiconductor Electronic Components Datasheet  

NTMFS4983NF Datasheet

Power MOSFET

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NTMFS4983NF pdf
NTMFS4983NF
Power MOSFET
30 V, 106 A, Single N−Channel, SO−8 FL
Features
Integrated Schottky Diode
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
Synchronous Rectification for DC−DC Converters
Low Side Switching
Telecom Secondary Side Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
30 A
TA = 85°C
22
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA v
10 sec
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
3.13 W
48 A
34
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
Current RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
7.7 W
22 A
16
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
1.7 W
106 A
76
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
38 W
320 A
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
TA = 25°C
IDmaxpkg
TJ,
TSTG
IS
dV/dt
100
−55 to
+150
54
6
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, IL = 45 Apk,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
101 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.1 mW @ 10 V
3.1 mW @ 4.5 V
ID MAX
106 A
N−CHANNEL MOSFET
D (5, 6)
G
(4)
S (1, 2, 3)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4983NF
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4983NFT1G
Package
SO−8FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTMFS4983NFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 3
1
Publication Order Number:
NTMFS4983NF/D


  ON Semiconductor Electronic Components Datasheet  

NTMFS4983NF Datasheet

Power MOSFET

No Preview Available !

NTMFS4983NF pdf
NTMFS4983NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient − t v 10 sec
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
3.3
40
74
16.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 1.0 mA
ID = 10 mA, referenced to 25°C
VGS = 0 V,
VDS = 24 V
TJ = 25°C
VDS = 0 V, VGS = ±20 V
30
V
15 mV/°C
500 mA
±100
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 1.0 mA
1.2 1.7
Negative Threshold Temperature Coefficient VGS(TH)/TJ
ID = 10 mA, referenced to 25°C
5.0
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 30 A
1.6
ID = 15 A
1.6
VGS = 4.5 V
ID = 30 A
2.5
ID = 15 A
2.5
Forward Transconductance
gFS VDS = 1.5 V, ID = 15 A
60
CHARGES AND CAPACITANCES
2.3 V
mV/°C
2.1
mW
3.1
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V,
ID = 30 A
3250
1340
90
22.6
2.9
7.0
6.9
47.9
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
13.5
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
24.9
ns
28.7
Fall Time
tf
10.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2


Part Number NTMFS4983NF
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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