http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  ON Semiconductor Electronic Components Datasheet  

NTMFS4H013NF Datasheet

Power MOSFET

No Preview Available !

NTMFS4H013NF pdf
NTMFS4H013NF
Power MOSFET
25 V, 269 A, Single N−Channel, SO−8FL
Features
Integrated Schottky Diode
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
Power Dissipation RqJA
(TA = 25°C, Note 1)
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
Power Dissipation RqJC
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 51 Apk, L = 0.3 mH)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
dV/dt
25 V
±20 V
43 A
2.70 W
269 A
104 W
505 A
390 mJ
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 33 A, EAS = 164 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
40.0
1.5
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
www.onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
1.4 mW
0.9 mW
TYP QGTOT
26 nC
56 nC
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G
(4)
S (1, 2, 3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 0
1
Publication Order Number:
NTMFS4H013NF/D


  ON Semiconductor Electronic Components Datasheet  

NTMFS4H013NF Datasheet

Power MOSFET

No Preview Available !

NTMFS4H013NF pdf
NTMFS4H013NF
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
25
34.5
V
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 20 V
TJ = 25 °C
500 mA
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
IGSS
VDS = 0 V, VGS = +20 V
+100
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 12 V, ID = 15 A
1.2 2.1 V
4.6 mV/°C
0.72 0.9
1.1 1.4
mW
119 S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
Gate Resistance
RG
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 12 V; ID = 30 A
VGS = 10 V, VDS = 12 V; ID = 30 A
TA = 25°C
VGS = 4.5 V, VDD = 12 V, ID = 15 A,
RG = 3.0 W
VGS = 10 V, VDD = 12 V,
ID = 15 A, RG = 3.0 W
3923
2537
114
26
2.9
10.7
5.8
56
1.0
17.6
55.1
29.4
9.96
11.3
44.2
39.2
7.1
pF
nC
nC
W
ns
ns
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 2.0 A
TJ = 25°C
TJ = 125°C
0.38
0.297
0.6
V
Reverse Recovery Time
tRR
61.3
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 30 A
30.4 ns
30.9
Reverse Recovery Charge
QRR
66 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2


Part Number NTMFS4H013NF
Description Power MOSFET
Maker ON Semiconductor
Total Page 6 Pages
PDF Download
NTMFS4H013NF pdf
Download PDF File
NTMFS4H013NF pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 NTMFS4H013NF Power MOSFET ON Semiconductor
ON Semiconductor
NTMFS4H013NF pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components