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  ON Semiconductor Electronic Components Datasheet  

NTMS4802N Datasheet

Power MOSFET

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NTMS4802N pdf
NTMS4802N
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Power MOSFET
30 V, 18 A, NChannel, SO8
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
This is a PbFree Device
Applications
DCDC Converters
Synchronous MOSFET
Printers
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 70°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
15
12
1.66
Continuous Drain
Current RqJA (Note 2)
Steady
TA = 25°C
TA = 70°C
ID
11.1
8.9
Power Dissipation
(Note 2)
RqJA
State
TA = 25°C
PD
0.91
Continuous Drain
C(Nuortreen1t)RqJA, t v 10 s
TA = 25°C
TA = 70°C
ID
18
15
Power Dissipation
RqJA, t v 10 s(Note 1)
TA = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 29 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
PD 2.5
IDM 60
TTsJtg,
55 to
150
IS 2.5
EAS 420
TL 260
Unit
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient – Steady State (Note 1)
RqJA
75.5 °C/W
JunctiontoAmbient – t v 10 s (Note 1)
RqJA
50.5
JunctiontoFoot (Drain)
RqJF
22
JunctiontoAmbient – Steady State (Note 2)
RqJA
138
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2008
December, 2008 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
4.0 mW @ 10 V
5.5 mW @ 4.5 V
ID MAX
18 A
NChannel
D
G
S
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
4802N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS4802NR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMS4802N/D


  ON Semiconductor Electronic Components Datasheet  

NTMS4802N Datasheet

Power MOSFET

No Preview Available !

NTMS4802N pdf
NTMS4802N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V, VDS = 24 V
TJ = 25°C
TJ = 85°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES AND GATE RESISTANCE
VGS = 10 V, ID = 18 A
VGS = 4.5 V, ID = 15 A
VDS = 1.5 V, ID = 18 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 15 V, ID = 18 A
VGS = 10 V, VDS = 15 V, ID = 18 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V, IS = 2.5 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 2.5 A
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
3. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Min
30
1.0
www.DataSheet4U.com
Typ Max Unit
V
26 mV/°C
1.0
10
±100
mA
nA
2.5 V
7.0 mV/°C
3.2 4.0 mW
4.3 5.5
55 S
5300
880
460
36
6.5
14
13
75
pF
nC
nC
18 ns
42
70
56
0.7 1.0 V
0.6
40 ns
20
20
40 nC
0.66 nH
0.20 nH
1.5 nH
1.0 1.5 W
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2


Part Number NTMS4802N
Description Power MOSFET
Maker ON Semiconductor
Total Page 5 Pages
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NTMS4802N pdf
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