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  ON Semiconductor Electronic Components Datasheet  

NTP5860NL Datasheet

N-Channel Power MOSFET

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NTP5860NL pdf
NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are PbFree, Halogen Free and are RoHS Compliant
NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
Continuous Drain
Current, RqJC
Steady
State
TA = 25°C
TA = 100°C
Power Dissipation,
RqJC
Steady
State
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
IDMmax
TJ, Tstg
60
$20
220
156
283
660
130
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (L = 0.3 mH)
IS 130
EAS 735
Lead Temperature for Soldering
Purposes (1/8from Case for 10 Seconds)
TL 260
Unit
V
V
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain) Steady State
RqJC
0.53 °C/W
JunctiontoAmbient Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
Augsut, 2012 Rev. 1
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
3.0 mW @ 10 V
3.6 mW @ 4.5 V
ID MAX
220 A
D
G
S
NCHANNEL MOSFET
4
4
12
3
12
3
TO220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP
5860NLG
AYWW
1
Gate
3
Source
NTB
5860NLG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= PbFree Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5860NL/D


  ON Semiconductor Electronic Components Datasheet  

NTP5860NL Datasheet

N-Channel Power MOSFET

No Preview Available !

NTP5860NL pdf
NTB5860NL, NTP5860NL, NVB5860NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
ID = 250 mA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
VGS = 0 V
VDS = 60 V
TJ = 125°C
GateSource Leakage Current
ON CHARACTERISTICS (Note 2)
IGSS
VDS = 0 V, VGS = $20 V
Gate Threshold Voltage
Threshold Temperature Coefficient
DraintoSource OnResistance
VGS(th)
VGS(th)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 48 V,
ID = 40 A
VGS = 10 V, VDD = 48 V,
ID = 100 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
IS = 40 A
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, IS = 100 A,
tb dIS/dt = 20 A/ms
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
60
6.1
V
mV/°C
1.0 mA
100
$100
nA
1.0 3.0 V
7.7 mV/°C
2.4 3.0 mW
2.8 3.6
47 S
13216
1127
752
220
13
37
54
pF
nC
25 ns
58
98
144
0.76 1.1
0.60
50
25
25
71
Vdc
ns
nC
http://onsemi.com
2


Part Number NTP5860NL
Description N-Channel Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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