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  ON Semiconductor Electronic Components Datasheet  

NTTFS4941N Datasheet

Power MOSFET

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NTTFS4941N pdf
NTTFS4941N
Power MOSFET
30 V, 46 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
LowSide DCDC Converters
Power Load Switch
Notebook Battery Management
Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
13.5
9.7
2.19
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 85°C
ID
19 A
13.7
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
www.DataPRSoqhJweAee(tr4NDUoi.tsecsoi2pm)ation
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.42
8.3
6.0
0.84
46
33
25.5
140
70
55 to
+150
29
6.0
W
A
W
A
W
A
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 29 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
42 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
6.2 mW @ 10 V
9.0 mW @ 4.5 V
ID MAX
46 A
NChannel MOSFET
D (58)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4941 D
S AYWWG D
GGD
4941
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4941NTAG WDFN8 1500/Tape & Reel
(PbFree)
NTTFS4941NTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4941N/D


  ON Semiconductor Electronic Components Datasheet  

NTTFS4941N Datasheet

Power MOSFET

No Preview Available !

NTTFS4941N pdf
NTTFS4941N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctiontoCase (Drain)
RqJC
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – Steady State (Note 4)
RqJA
JunctiontoAmbient – (t 10 s) (Note 3)
RqJA
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size (40 mm2, 1 oz. Cu).
Value
4.9
57
148
28.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource On Resistance
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = 10 V
ID = 20 A
ID = 10 A
VGS = 4.5 V
ID = 20 A
ID = 10 A
VDS = 1.5 V, ID = 15 A
Input Capacitance
Ciss
Output Capacitance
www.DataRSheveeerts4eU.Tcroamnsfer Capacitance
Coss
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 20 A
VGS = 10 V, VDS = 15 V, ID = 20 A
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
30
1.2
Typ Max Unit
V
15 mV/°C
1.0
10
±100
mA
nA
2.2 V
4.3 mV/°C
4.8 6.2 mW
4.8
7.0 9.0
7.0
33 S
1619
573
18
10.1
2.6
4.9
1.3
22.8
pF
nC
nC
11 ns
21
19
3.0
http://onsemi.com
2


Part Number NTTFS4941N
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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