http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




  ON Semiconductor Electronic Components Datasheet  

NTTFS4C06N Datasheet

Power MOSFET

No Preview Available !

NTTFS4C06N pdf
NTTFS4C06N
Power MOSFET
30 V, 67 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
DraintoSource Voltage
VDSS
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 85°C
VGS
ID
Power Dissipation
(Note 1)
RqJA
TA = 25°C
PD
Value
30
±20
18
13
2.16
Unit
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C ID 25.6 A
TA = 85°C
18.5
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.4 W
11 A
8
0.81 W
67 A
49
31 W
166
55 to
+150
28
7
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
68 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 20 A, EAS = 20 mJ.
© Semiconductor Components Industries, LLC, 2014
February, 2014 Rev. 1
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.2 mW @ 10 V
6.1 mW @ 4.5 V
ID MAX
67 A
NChannel MOSFET
D (58)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C06 D
S AYWWG D
GGD
4C06
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4C06NTAG WDFN8 1500 / Tape &
(PbFree)
Reel
NTTFS4C06NTWG WDFN8 5000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C06N/D


  ON Semiconductor Electronic Components Datasheet  

NTTFS4C06N Datasheet

Power MOSFET

No Preview Available !

NTTFS4C06N pdf
NTTFS4C06N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – Steady State (Note 5)
JunctiontoAmbient – (t 10 s) (Note 4)
4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
5. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
4.1
58
154.3
28.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
30
34
V
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
14.4 mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 6)
IDSS
IGSS
VVDGSS
=
=
0 V,
24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0
10
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
gFS
RG
VGS = VDS, ID = 250 mA
1.3
3.8
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 1.5 V, ID = 15 A
TA = 25°C
3.4
4.9
58
1.0
2.2 V
mV/°C
4.2
6.1 mW
S
W
Input Capacitance
CISS
1683 3366
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
841 1682
pF
Reverse Transfer Capacitance
CRSS
40
Capacitance Ratio
CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz
0.023
Total Gate Charge
QG(TOT)
11.6 16.2
Threshold Gate Charge
GatetoSource Charge
QG(TH)
QGS
VGS = 4.5 V, VDS = 15 V; ID = 30 A
2.6 3.6
4.7 6.6
nC
GatetoDrain Charge
QGD
4.0 5.6
Gate Plateau Voltage
VGP
3.1 V
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
26 36
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2


Part Number NTTFS4C06N
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
PDF Download
NTTFS4C06N pdf
Download PDF File
NTTFS4C06N pdf
View for Mobile



Buy Electronic Components




Related Datasheet

1 NTTFS4C06N Power MOSFET ON Semiconductor
ON Semiconductor
NTTFS4C06N pdf






Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

site map

webmaste! click here

contact us

Buy Components