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  ON Semiconductor Electronic Components Datasheet  

NTTFS4C08N Datasheet

Power MOSFET

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NTTFS4C08N pdf
NTTFS4C08N
Power MOSFET
30 V, 52 A, Single N−Channel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC−DC Converters
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
VDSS
30
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
VGS ±20
TA = 25°C
ID
15
TA = 85°C
10.8
TA = 25°C PD 2.13
Unit
V
V
A
W
Continuous Drain
Current RqJA 10 s
(Note 1)
TA = 25°C
TA = 85°C
ID
21 A
15
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.2 W
9.3 A
6.7
0.82 W
52 A
37.5
25.5 W
144 A
−55 to °C
+150
23 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH,
RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
42 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 21 A, EAS = 22 mJ.
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V(BR)DSS
30 V
RDS(on) MAX
5.9 mW @ 10 V
9.0 mW @ 4.5 V
ID MAX
52 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C08 D
S AYWWG D
GGD
4C08
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4C08NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 2
1
Publication Order Number:
NTTFS4C08N/D


  ON Semiconductor Electronic Components Datasheet  

NTTFS4C08N Datasheet

Power MOSFET

No Preview Available !

NTTFS4C08N pdf
NTTFS4C08N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t 10 s) (Note 4)
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
4.9
58.8
153
30
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
V(BR)DSS
V(BR)DSSt
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
30
34
13.8
V
V
mV/°C
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0
10
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
gFS
RG
VGS = VDS, ID = 250 mA
1.3
5.0
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 18 A
VDS = 1.5 V, ID = 15 A
TA = 25°C
4.7
7.2
42
1.0
2.2 V
mV/°C
5.9
mW
9.0
S
W
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 7)
CISS
COSS
CRSS
CRSS/CISS
QG(TOT)
QG(TH)
QGS
QGD
VGP
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
1113
702
39
0.035
8.4
1.8
3.5
3.3
3.4
18.2
pF
nC
V
nC
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
9.0
33
ns
15
4.0
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2


Part Number NTTFS4C08N
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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