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  ON Semiconductor Electronic Components Datasheet  

NTTFS4H05N Datasheet

Power MOSFET

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NTTFS4H05N pdf
NTTFS4H05N
Power MOSFET
25 V, 94 A, Single N−Channel, m8−FL
Features
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
Power Dissipation RqJA
(TA = 25°C, Note 1)
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
Power Dissipation RqJC
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(IL = 41 Apk, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
25
±20
22.4
2.66
94
46.3
304
84
V
V
A
W
A
W
A
mJ
dV/dt
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD TSLD 260 °C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 27 A, EAS = 36 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
47
2.7
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
www.onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
4.8 mW
3.3 mW
TYP QGTOT
8.7 nC
18.9 nC
PIN CONNECTIONS
m8−FL (3.3 x 3.3 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 3
1
Publication Order Number:
NTTFS4H05N/D


  ON Semiconductor Electronic Components Datasheet  

NTTFS4H05N Datasheet

Power MOSFET

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NTTFS4H05N pdf
NTTFS4H05N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
25
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
15 mV/°C
1.0
mA
20
100 nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
CHARGES AND CAPACITANCES
gFS
VGS = VDS, ID = 250 mA
1.2 2.1 V
3.8 mV/°C
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 12 V, ID = 15 A
2.5 3.3
mW
3.8 4.8
69 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
RG
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 12 V; ID = 30 A
VGS = 10 V, VDS = 12 V; ID = 30 A
TA = 25°C
1205
835
45
8.7
2.7
3.6
1.88
18.9
1.0
2
pF
nC
nC
W
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
SWITCHING CHARACTERISTICS (Note 6)
td(ON)
tr
td(OFF)
tf
VGS = 4.5 V, VDS = 12 V, ID = 15 A,
RG = 3.0 W
8.9
32
14.6
3
ns
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 12 V,
ID = 15 A, RG = 3.0 W
6.0
27
ns
18.6
2.3
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
0.78 1.1
0.6
V
Reverse Recovery Time
tRR
30.8
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 10 A
15 ns
15.8
Reverse Recovery Charge
QRR
20 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2


Part Number NTTFS4H05N
Description Power MOSFET
Maker ON Semiconductor
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