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  ON Semiconductor Electronic Components Datasheet  

SZESD7471 Datasheet

Ultra-Low Capacitance ESD Protection

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SZESD7471 pdf
ESD7471, SZESD7471
Ultra-Low Capacitance ESD
Protection
Micro−Packaged Diodes for ESD Protection
The ESD7471 is designed to protect voltage sensitive components
that require ultra-low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
Features
Industry Leading Capacitance Linearity Over Voltage
Ultra−Low Capacitance: 0.35 pF Max
Stand−off Voltage: 5.3 V
Low Leakage: < 1 nA
Low Dynamic Resistance: < 1 W
IEC61000−4−2 Level 4 ESD Protection
1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
RF Signal ESD Protection
RF Switching, PA, and Antenna ESD Protection
Near Field Communications
USB 2.0, USB 3.0
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
IEC 61000−4−2 Contact (ESD) (Note 1)
IEC 61000−4−2 Air (ESD) (Note 1)
ESD
ESD
±20
±20
Unit
KV
kV
IEC 61000−4−5 (ESD) (Note 2)
Total Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
ESD
°PD°
RqJA
TJ, Tstg
2.2
300
400
−55 to
+150
A
mW
°C/W
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. At least 10 discharges at TA = 25°C, per IEC61000−4−2 waveform.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.
3. Mounted with recommended minimum pad size, DC board FR−4
http://onsemi.com
MARKING
DIAGRAM
XDFN2
CASE 711AM
DM
G
D = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
ESD7471N2T5G
XDFN2 8000 / Tape &
(Pb−Free)
Reel
SZESD7471N2T5G XDFN2 8000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 1
1
Publication Order Number:
ESD7471/D


  ON Semiconductor Electronic Components Datasheet  

SZESD7471 Datasheet

Ultra-Low Capacitance ESD Protection

No Preview Available !

SZESD7471 pdf
ESD7471, SZESD7471
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP Maximum Reverse Peak Pulse Current
VC Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IPP
IT
VC VBR VRWM IR IIRT VRWM VBR VC V
IPP
Bi−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
VRWM
VBR
IR
VC
CJ
IT = 1 mA (Note 4)
VRWM = 5.3 V
IPP = 1 A (Note 5)
VR = 0 V, f = 1 MHz
VR = 0 V, f = 1 GHz
5.3 V
7.0 V
< 1 50 nA
13 15
V
0.24 0.35
0.24 0.35
pF
Dynamic Resistance
RDYN TLP Pulse
0.8 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
5. Non−repetitive current pulse at 25°C, per IEC61000−4−5 waveform.
http://onsemi.com
2


Part Number SZESD7471
Description Ultra-Low Capacitance ESD Protection
Maker ON Semiconductor
Total Page 4 Pages
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