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OPTEK Technologies
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OPR2800 Datasheet Preview

OPR2800 Datasheet

Infrared Light Emitting Diode

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OPR2800 pdf
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Infrared Light Emitting Diode
OPR2800, OPR2800T
Features:
High-power GaAIAs
Matches PLCC-2 footprint
880 nm wavelength
Wide beam angle
Wide operating temperature range (-40o C to +100o C)
Description:
The OPR2800 is a GaAIAs infrared LED mounted in a surface mount chip carrier (SMCC) package with a flat lens
window that allows a wide beam angle. The SMCC format has a lower height profile than the PLCC-2 package
and mounts in the same footprint. The device is suitable for use in single device or array applications. The
OPR2800 is spectrally matched to the OPR5500 phototransistor.
Applications:
Non-contact position sensing
Datum detection
Machine automation
Optical encoding
Ordering Information
Part LED Peak Total
Number Wavelength Beam Angle Packaging
OPR2800
OPR2800T
880 nm
100°
Waffle Pack
Tape & Reel
Anode Indicator
2
1
Pin #
1
2
LED
Anode
Cathode
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A.4 1/07
Page 1 of 2



OPTEK Technologies
OPTEK Technologies

OPR2800 Datasheet Preview

OPR2800 Datasheet

Infrared Light Emitting Diode

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OPR2800 pdf
Infrared Light Emitting Diode
OPR2800, OPR2800T
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Solder reflow time within 5°C of peak temperature is 20 to 40 seconds(1)
Power Dissipation
-40o C to +100o C
-40o C to +100o C
30 V
50 mA
250° C
130 mW(2)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
EE (APT) Apertured Radiant Incidence
0.2 -
- mW/cm2 IF = 20 mA(3)
VF Forward Voltage
IR Reverse Current
λP Wavelength at Peak Emission
-
- 1.50
V IF = 50 mA
- - 100 µA VR= 2.0 V
890 -
nm IF = 10 mA
θHP Emission Angle at Half Power Points
- 100 - Degree IF = 20 mA
tr Output Rise Time, Output Fall Time
tf Output Rise Time, Output Fall Time
-
- 500
ns IF(PK) = 100 mA, PW = 10 µs,
-
- 500
ps D.C. = 10.0%
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 1.73 mW/° C above 25° C.
3. EE(APT) is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular to and
centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. EE(APT) is not necessarily uniform
within the measured area.
Forward Voltage vs Forward Current
vs Temperature
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0
-60° C
-40° C
-20° C
0° C
20° C
40° C
60° C
80° C
100° C
120°C
10 20 30 40 50 60 70 80 90 100
Forward Current (mA)
OP2800
Optical Power vs IF vs
Temperature
3.5
Normalized at 50 mA and 20° C
3.0 -60° C
-40° C
-20° C
0° C
2.5 20° C
40° C
60° C
80° C
2.0
100° C
120° C
1.5
1.0
0.5
0.0
0
10 20 30 40 50 60 70 80 90 100
Forward Current IF (mA)
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A.4 1/07
Page 2 of 2
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com


Part Number OPR2800
Description Infrared Light Emitting Diode
Maker OPTEK Technologies
Total Page 2 Pages
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