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OD-24F2 Datasheet

HIGH-POWER GaAlAs IR EMITTERS

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OD-24F2 pdf
HIGH-POWER GaAlAs IR EMITTERS
OD-24F2
www.DataSheet4U.com
GLASS
DOME
.183 .152
.186 .154
.030
.040
1.00
MIN.
ANODE
(CASE)
.015
.209
.220
FEATURES
• High current capability
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Hermetically sealed TO-46 package
• Narrow angle of emission
.100
.197
.205
.017
CATHODE
.041
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, Po
Radiant Intensity, Ie
Peak Emission Wavelength, LP
Spectral Bandwidth at 50%, $L
Half Intensity Beam Angle, Q
TEST CONDITIONS
IF = 200mA
IF = 50mA
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
Rise Time
IF = 100mA
IR = 10MA
VR = 0V
Fall Time
MIN
20
5
TYP
MAX
UNITS
25 mW
220 mW/sr
880 nm
80 nm
8 Deg
1.5 1.8 Volts
30 Volts
60 pF
0.7 Msec
0.7 Msec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10Ms, 230Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
360mW
200mA
7A
5V
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C TO 100°C
Maximum Junction Temperature
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
100°C
350°C/W Typical
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com



OptoDiode
OptoDiode

OD-24F2 Datasheet Preview

OD-24F2 Datasheet

HIGH-POWER GaAlAs IR EMITTERS

No Preview Available !

OD-24F2 pdf
HIGH-POWER GaAlAs IR EMITTERS
OD-24F2
www.DataSheet4U.com
THERMAL DERATING CURVE
400
350
300 INFINITE
250 HEAT SINK
200
NO
150 HEAT SINK
100
50
0
25
50 75
AMBIENT TEMPERATURE (°C)
MAXIMUM PEAK PULSE CURRENT
10
t = 10Ms
t = 50Ms
1 t = 100Ms
0.1
Ip
0.01
100 0.01
t
D
=
t
T
T
0.1 1 10
DUTY CYCLE, D (%)
RADIATION PATTERN
100
100
80
60
40
20
0
–25 –20 –15 –10 –5
05
10 15 20 25
BEAM ANGLE, Q(deg)
FORWARD I-V CHARACTERISTICS
4
3
2
1
0
01 2 34
FORWARD VOLTAGE, VF (volts)
SPECTRAL OUTPUT
100
5
POWER OUTPUT vs TEMPERATURE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
6 –50 –25 0 25 50 75 100
AMBIENT TEMPERATURE (°C)
POWER OUTPUT vs FORWARD CURRENT
1,000
80
100
60
40
20
0
750
800 850 900 950
WAVELENGTH, L(nm)
1,000
10 DC
PULSE
10Ms, 100Hz
1
10
100
1,000
10,000
FORWARD CURRENT, IF (mA)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com


Part Number OD-24F2
Description HIGH-POWER GaAlAs IR EMITTERS
Maker OptoDiode
Total Page 2 Pages
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