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Pan Jit International
Pan Jit International

PJP1NA80 Datasheet Preview

PJP1NA80 Datasheet

800V N-Channel MOSFET

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PJP1NA80 pdf
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
800V N-Channel MOSFET
Voltage
800 V Current
1A
Features
RDS(ON), VGS@10V,ID@0.5A<16
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-220AB
SOT-223
TO-252
TO-251AB
Mechanical Data
Case : TO-251AB ,TO-220AB, SOT-223, TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
TC=25oC
Derate above 25oC
VDS
VGS
ID
IDM
EAS
PD
Operating Junction and
Storage Temperature Range
TJ,TSTG
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
RθJC
RθJA
TO-251AB
34
0.27
3.68
110
TO-220AB
TO-252
800
+30
1
4
23
45 34
0.36
0.27
-55~150
2.78
3.68
62.5
110
Limited only By Maximum Junction Temperature
SOT-223
0.3
1.2
3.3
0.026
UNITS
V
V
A
A
mJ
W
W/ oC
oC
-
37.9 (Note 4)
oC/W
March 10,2014-REV.00
Page 1



Pan Jit International
Pan Jit International

PJP1NA80 Datasheet Preview

PJP1NA80 Datasheet

800V N-Channel MOSFET

No Preview Available !

PJP1NA80 pdf
PPJW1NA80 / PJU1NA80 / PJD1NA80 / PJP1NA80
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Diode Forward Voltage
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VGS=10V,ID=0.5A
VDS=800V,VGS=0V
VGS=+30V,VDS=0V
IS=1A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS=640V, ID=1A,
VGS=10V (Note 2,3)
VDS=25V, VGS=0V,
f=1.0MHZ
800 -
-V
3.1 3.5 4.4
V
-
12.5
16
- - 1.0 uA
-
-
+100
nA
- - 1.4 V
-6-
- 1.3 -
- 2.6 -
- 203 -
- 17 -
-1-
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=400V, ID=1A,
RG=25(Note 2,3)
-8-
- 15 -
ns
- 13 -
- 21 -
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
IS
--- - - 1 A
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
--- - - 4 A
Reverse Recovery Time
Reverse Recovery Charge
NOTES :
trr VGS=0V, IS=1A
Qrr dIF/ dt=100A/us (Note 2)
- 160 -
- 0.3 -
ns
uC
1. L=30mH, IAS=1.17A, VDD=110V, RG=25ohm, Starting TJ=25oC
2. Pulse width<300us, Duty cycle<2%
3. Essentially independent of operating temperature typical characteristics.
4. RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
5. Guaranteed by design, not subject to production testing
March 10,2014-REV.00
Page 2


Part Number PJP1NA80
Description 800V N-Channel MOSFET
Maker Pan Jit International
Total Page 8 Pages
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PJP1NA80 pdf
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