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Panasonic Electronic Components Datasheet

2SC5914 Datasheet

Silicon NPN Triple Diffusion Mesa Type

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2SC5914 pdf
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Power Transistors
2SC5914
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
Features
High breakdown voltage: VCBO 1 500 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
1 500
1 500
600
7
5
12
22
40
3
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50 µA
VCB = 1 500 V, IE = 0
1 mA
Emitter-base cut-off current (Collector open) IEBO VEB = 7 V, IC = 0
50 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 6 A
5 10
Collector-emitter saturation voltage
VCE(sat) IC = 6 A, IB = 1.5 A
2.5 V
Base-emitter saturation voltage
VBE(sat) IC = 6 A, IB = 1.5 A
1.5 V
Transition frequency
fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3 MHz
Storage time
tstg IC = 6 A, Resistance loaded
2.7 µs
Fall time
tf IB1 = 1.5 A, IB2 = −3.0 A
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2004
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SJD00310BED
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Panasonic Electronic Components Datasheet

2SC5914 Datasheet

Silicon NPN Triple Diffusion Mesa Type

No Preview Available !

2SC5914 pdf
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2SC5914
PC Ta
80
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
60
40
(1)
20
(2)
(3)
0
0 50 100 150
Ambient temperature Ta (°C)
IC VCE
10
IB = 2.0 A
1.8 A
1.6 A
8 1.4 A
1.2 A
1.0 A
0.8 A
6
0.6 A
0.4 A
4
0.2 A
2
0 0A
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC VBE
12
VCE = 5 V
8
4
Ta = 120°C
25°C
40°C
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
10
IC / IB = 4
1
101
Ta = 120°C
101
40°C
25°C
102
101
1
Collector current IC (A)
10
hFE IC
102
VCE = 5 V
Ta = 120°C
25°C
40°C
10
1
101
1
Collector current IC (A)
10
1 000
800
tf IB1(END)
IC = 6.3 A
L load
600
400
200
0
0.4 0.8 1.2 1.6 2.0
Base current IB1(END) (A)
tstg IB1(END)
2.0
IC = 6.3 A
L load
1.6
1.2
0.8
0.4
0
0.4 0.8 1.2 1.6 2.0
Base current IB1(END) (A)
Area of safe operation
102
ICP
10 IC
DC
10 ms
t = 100 µs
1 ms
1
101
Area of safe operation (Horizontal operation)
30
fH = 64 kHz, TC < 90°C
ASO for a single
pulse load caused by
25 EHT flashover during
horizontal operation.
20
15
10
102
Non repetitive pulse
103 TC = 25°C
1 10
VCEO max.
102 103
Collector-emitter voltage VCE (V)
5
0 < 1 mA
0 500 1 000 1 500 2 000
Collector-emitter voltage VCE (V)
2
DataSheet4 U .com
SJD00310BED


Part Number 2SC5914
Description Silicon NPN Triple Diffusion Mesa Type
Maker Panasonic
Total Page 4 Pages
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