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Panasonic Electronic Components Datasheet

MA750A Datasheet

Schottky Barrier Diodes

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MA750A pdf
Schottky Barrier Diodes (SBD)
MA111
MA750, MA750A
Silicon epitaxial planer type (cathode common)
For switching power supply
s Features
q Forward current (average) IF(AV) : 10A type
q Sealed in TO-220F full-pack package, with high reliability
q Cathode common dual type
q Low forward voltage VF
10.0±0.2
5.5±0.2
Unit : mm
4.2±0.2
2.7±0.2
ø3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
-0.1
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter
Repetitive peak
reverse voltage
MA750
MA750A
Average forward current
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
* Sine half wave : 10ms/cycle
Symbol
VRRM
IF(AV)
IFSM*
Tj
Tstg
Rating
40
45
10
120
– 40 to +125
– 40 to +125
Unit
V
A
A
˚C
˚C
2.54±0.25
5.08±0.5
123
1 : Anode
2 : Cathode
(Common)
3 : Anode
TO-220F(a) (TO-220 Full-Pack Package)
s Internal Connection
123
s Electrical Characteristics (Ta= 25˚C)
Parameter
Symbol
Condition
min typ max Unit
MA750
Reverse current (DC)
MA750A
IR
VR= 40V
VR= 45V
3
mA
3
Forward voltage (DC)
VF IF= 5A
0.55 V
Thermal resistance
Rth(j-c) Flat direct current between junction and case
3 ˚C/W
y Rated input/output frequency : 150MHz
s Marking
Part Number MA750
MA750A
Symbol MA750 MA750A


Panasonic Electronic Components Datasheet

MA750A Datasheet

Schottky Barrier Diodes

No Preview Available !

MA750A pdf
Schottky Barrier Diodes (SBD)
MA750, MA750A
IF – VF
102
100˚C
Ta=25˚C
125˚C
10
1
10–1
10–2
0
0.2 0.4 0.6 0.8 1.0
Forward voltage VF (V)
1.2
IF(AV) – TC
16
14
t0
t1
12
t0/t1=1/2
10
1/3
8
DC
1/6
6
4
2
0
20 40 60 80 100 120 140
Case temperature TC (˚C)
IR – VR
105
Ta=150˚C
104 125˚C
100˚C
103
102
25˚C
10
1
10–1
0
10 20 30 40 50
Reverse voltage VR (V)
60
PD(AV) – IF(AV)
15.0
12.5
t0
t1
10.0
t0/t1=1/6
7.5 1/3
1/2
DC
5.0
2.5
0
0 2 4 6 8 10 12
Average forward current IF(AV) (A)


Part Number MA750A
Description Schottky Barrier Diodes
Maker Panasonic
Total Page 2 Pages
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MA750A pdf
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